Liquid-phase stripping preparation method of single-layer or few-layer phosphaalkene

A liquid-phase exfoliation and single-layer technology, which is applied in the field of semiconductor material preparation, can solve the problems of low cost, high output, and low efficiency, and achieve the effect of low cost and high output

Inactive Publication Date: 2016-06-08
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the defects of mechanical exfoliation, low efficiency and unstable quality in the prior art, and the thickness of phosphorene produced by other preparation methods cannot meet the requirements, the present invention proposes a liquid-phase exfoliation preparation method of single-layer or few-layer phosphorene , can mass-produce phosphorene down to a single layer, the method has low cost and high yield, which is conducive to further scientific research and popularization and application of phosphorene

Method used

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  • Liquid-phase stripping preparation method of single-layer or few-layer phosphaalkene

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Embodiment 1

[0024] This embodiment includes the following steps: prepare a solution of flaky black phosphorus and methanol according to a concentration of 0.02 g / mL, and conduct an ultrasonic reaction at a stripping reaction temperature of 40° C. for 6 hours; centrifuge the ultrasonic solution at a speed of 14,000 rpm in a centrifuge After 30 minutes, take the supernatant; drop the solution on a silicon wafer and dry it at 90°C to obtain single-layer or few-layer black phosphorus.

[0025] Such as figure 1 Shown is the SEM photograph of the as-prepared few-layer phosphorene.

[0026] This embodiment includes the following steps: prepare a mixed solution of flaky black phosphorus, methanol, and ethanol according to a concentration of 0.02 g / mL, and perform ultrasonic reaction for 12 hours at a stripping reaction temperature of 40° C.; put the ultrasonic solution under a centrifuge Centrifuge at 14,000 rpm for 30 minutes, and take the supernatant; drop the solution on a silicon wafer and d...

Embodiment 2

[0029] This embodiment includes the following steps: prepare a solution of flaky black phosphorus and methanol at a concentration of 0.1 g / mL, and perform an ultrasonic reaction at a stripping reaction temperature of 40° C. for 24 hours; centrifuge the ultrasonic solution at a speed of 14,000 rpm in a centrifuge After 30 minutes, take the supernatant; drop the solution on the silicon wafer, spin-coat at 500rpm for 60s, and dry at 90°C to obtain a few-layer black phosphorus.

Embodiment 3

[0031] This embodiment includes the following steps: prepare a solution of flaky black phosphorus and isopropanol at a concentration of 0.5 g / mL, and perform an ultrasonic reaction at a stripping reaction temperature of 40° C. for 48 hours; Centrifuge at a rotating speed for 30 minutes, and take the supernatant; drop the solution on a silicon wafer and dry it at 90°C to obtain a few-layer black phosphorus.

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Abstract

The invention relates to a liquid-phase stripping preparation method of single-layer or few-layer phosphaalkene. The preparation method comprises the following steps: mixing flaky black phosphorus and an organic solvent, sequentially carrying out ultrasonic cracking treatment and centrifugation, dropwisely adding the supernate of the product onto a substrate, and carrying out spin coating or drying to obtain the single-layer or few-layer phosphaalkene. The method can implement mass production on phosphaalkene with the minimum single layer, has the advantages of low cost and high yield, and is beneficial to further scientific research and popularization and application of phosphaalkene.

Description

technical field [0001] The invention relates to a technology in the field of semiconductor material preparation, in particular to a liquid-phase exfoliation method of phosphorene with 100 or less layers. Background technique [0002] Two-dimensional black phosphorus is a new two-dimensional crystal discovered in early 2014. Since two-dimensional black phosphorus exhibits excellent properties in terms of both electron mobility and on-off ratio, it is considered to be the next step after graphene and monolayer molybdenum disulfide (MoS 2 ), a post-graphene material with the most application prospects in thin-film electronic optical devices and new electronic components sensitive to anisotropy. [0003] Using a method similar to exfoliating graphene, the research groups of Zhang Yuanbo, Professor Chen Xianhui and Professor Peide successfully obtained nanometer-thick black phosphorus crystals. They found that the energy gap of the two-dimensional black phosphorus crystal is a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B25/02
CPCC01B25/02
Inventor 陈长鑫廖成浩
Owner SHANGHAI JIAO TONG UNIV
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