Polishing solution for silicon carbide wafers

A polishing liquid and silicon carbide technology, applied in the field of polishing liquid, can solve the problems of easy crystallization of silicon dioxide, low removal rate, long processing time, etc.

Inactive Publication Date: 2016-06-08
BEIJING CENTURY GOLDRAY SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Silicon carbide (SiC) wafer is a very important third-generation semiconductor material. Due to the high hardness of SiC crystal, the Mohs hardness is about 9.3, which is slightly lower than that of diamond, which makes its processing difficult. At present, the traditional polishing fluid uses silicon dioxide The disadvantage of polishing liquid is that the removal rate is low and the processing time is very long. Silicon dioxide in the polishing liquid is easy to crystallize, and it is easy to cause a large number of scratches on the processed surface during production.
[0003] It takes 6-8 hours to treat the surface of SiC wafer with the existing polishing liquid, and the removal rate is low

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The silicon carbide wafer polishing solution configured in this embodiment, wherein the weight percentage of each component is: 10% of the silicon dioxide polishing solution, the particle size is 50nm, and the silicon dioxide polishing solution is water-soluble silica colloid; 0.1% nanoscale diamond grinding liquid, particle size 50nm, water-soluble diamond powder solution; auxiliary oxidant 3%, auxiliary oxidant is UP (UltraPure, ultra-pure) chemical reagent hydrogen peroxide solution with a concentration of 30%; pH regulator 0.5 %, sodium hydroxide is selected as the pH regulator; deionized water is the balance; the pH range of the polishing solution for the mixed silicon carbide wafer is 7.

[0017] Among them, the nano-scale diamond grinding liquid is an important component, and its function is to enhance the removal rate in the polishing process and ensure the surface quality of the wafer processing process; in addition, the components of the polishing liquid can ex...

Embodiment 2

[0021] The silicon carbide wafer polishing solution configured in this embodiment, wherein the weight percentage of each component is: 30% of the silicon dioxide polishing solution, the particle size is 100nm, and the silicon dioxide polishing solution is a water-soluble silicon dioxide solution; 10% nanoscale diamond grinding liquid, particle size 200nm, water-soluble diamond powder solution; 20% auxiliary oxidant, 30% UP (UltraPure, ultra-pure) chemical reagent hydrogen peroxide solution; pH regulator 10 %, potassium hydroxide is selected as the pH regulator; deionized water is the balance; the pH range of the polishing solution for the mixed silicon carbide wafer is 9.

Embodiment 3

[0023] The silicon carbide wafer polishing solution configured in this embodiment, wherein the weight percentage of each component is: 15% of the silicon dioxide polishing solution, the particle size is 80nm, and the silicon dioxide polishing solution is a water-soluble silicon dioxide solution; 5% nanoscale diamond grinding liquid, particle size 150nm, water-soluble diamond powder solution; 15% auxiliary oxidant, 30% UP (UltraPure, ultra-pure) chemical reagent hydrogen peroxide solution; pH adjuster 5 %, the pH adjuster is selected from polyhydroxypolyamine; deionized water is the balance; the pH range of the polishing solution for the mixed silicon carbide wafer is 8.2.

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Abstract

The invention discloses a polishing solution for silicon carbide wafers. The polishing solution is prepared from, by weight, 10-30% of a silicon dioxide polishing solution with the particle size of 50-100 nm, 0.1-10% of a nano-sized diamond grinding solution with the particle size of 50-200 nm, 3-20% of an assistant oxidizing agent, 0.5-10% of a pH regulator and the balance of deionized water. The pH value of the mixed polishing solution for silicon carbide wafers ranges from 7 to 9. The polishing solution is suitable for chemico-mechanical polishing of SiC wafers. The polishing solution has the advantages that the removal speed is high (removal can be completed within 1-3 h), processed silicon carbide wafers are bright, the surfaces of processed silicon carbide wafers are smooth and uniform without obvious scratches when observed with a strong light, and the surface roughness can stably reach a value smaller than 0.3 nm when detected with an atomic force microscope.

Description

technical field [0001] The invention relates to a polishing liquid used in processing silicon carbide wafers. Background technique [0002] Silicon carbide (SiC) wafer is a very important third-generation semiconductor material. Due to the high hardness of SiC crystal, the Mohs hardness is about 9.3, which is slightly lower than that of diamond, which makes its processing difficult. At present, the traditional polishing fluid uses silicon dioxide The disadvantage of polishing liquid is that the removal rate is low and the processing time is very long. The silicon dioxide in the polishing liquid is easy to crystallize, and it is easy to cause a large number of scratches on the processed surface during production. [0003] It takes 6-8 hours to treat the SiC wafer surface with the existing polishing fluid, and the removal rate is low. Contents of the invention [0004] Aiming at the problems existing in the prior art, the object of the present invention is to provide a poli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 詹琳
Owner BEIJING CENTURY GOLDRAY SEMICON CO LTD
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