Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing high-purity silicon by energy-saving and environmental protection technology

An energy-saving, environmentally-friendly, high-tech technology, applied in chemical instruments and methods, silicon compounds, sustainable manufacturing/processing, etc., can solve the problems of complex production process, high production cost, and many reaction steps, and achieve simple production process , Low production cost and simple structure

Active Publication Date: 2016-06-15
ANHUI SCI & TECH UNIV
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The existing method for producing high-purity silicon has the following deficiencies: 1. It pollutes the environment and produces pollutants such as carbon dioxide, trichlorosilane, and silicon tetrachloride during the production process; The reaction temperature is above 1000°C; 3. It is difficult to purify the obtained silicon (polysilicon, single crystal silicon); 4. The preparation process is complicated (more reaction steps), and the production cost is high (the price of raw materials is high), The equipment used must be resistant to high temperature and corrosion, and the structure is relatively complex
The above-mentioned lack of stuffing makes it difficult for the existing methods for preparing high-purity silicon to be used on a large scale in industry

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing high-purity silicon by energy-saving and environmental protection technology
  • Method for preparing high-purity silicon by energy-saving and environmental protection technology
  • Method for preparing high-purity silicon by energy-saving and environmental protection technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for producing high-purity silicon by utilizing energy-saving and environment-friendly technologies, comprising the following steps in sequence:

[0031] (1) Mix white carbon black and LiH uniformly in a ratio of 1.0094:1.4517 parts by weight to obtain a mixture, and place the mixture in a heating furnace with a chamber volume of 20 liters;

[0032] (2) Evenly spread 200-mesh carbon powder on the surface of the mixture, and the ratio of carbon powder to the mixture is 0.2161:2.4611 by weight;

[0033] (3) The temperature of the furnace cavity of the heating furnace is raised to 240°C through 0.8h, and the temperature is kept for 1.4h;

[0034] (4) The temperature of the furnace cavity of the heating furnace is raised to 360°C through 0.8h, and the temperature is kept for 4.2h to obtain the reaction product;

[0035] (5) cooling the reaction product to room temperature, washing it three times with normal temperature distilled water, each time using 20 parts by w...

Embodiment 2

[0039] A method for producing high-purity silicon by utilizing energy-saving and environment-friendly technologies, comprising the following steps in sequence:

[0040] (1) Quartz sand, LiAlH 4 Mix evenly according to the ratio of 0.8909:1.3501 parts by weight to obtain a mixture, and place the mixture in a heating furnace with a chamber volume of 10 liters;

[0041] (2) Evenly spread 140-mesh carbon powder on the surface of the mixture, and the ratio of carbon powder to the mixture is 0.1859:2.241 by weight;

[0042] (3) The temperature of the furnace cavity of the heating furnace is raised to 200° C. over 0.5 h, and the temperature is kept for 2 h;

[0043] (4) The temperature of the furnace chamber of the heating furnace is raised to 300° C. over 0.5 h, and the temperature is kept for 6 h to obtain the reaction product;

[0044] (5) cooling the reaction product to room temperature, washing it three times with normal temperature distilled water, each time using 15 parts by...

Embodiment 3

[0048] A method for producing high-purity silicon by utilizing energy-saving and environment-friendly technologies, comprising the following steps in sequence:

[0049] (1) White carbon black, NaBH 4 Mix evenly in the ratio of 0.9092:1.4078 parts by weight to obtain a mixture, and place the mixture in a heating furnace with a chamber volume of 15 liters;

[0050] (2) Evenly spread 170 mesh carbon powder on the surface of the mixture, the ratio of carbon powder to the mixture is 0.2103:2.317 by weight;

[0051] (3) The temperature of the furnace cavity of the heating furnace is raised to 220° C. over 0.65 hours, and kept for 1.7 hours;

[0052] (4) The temperature of the furnace chamber of the heating furnace is raised to 330°C through 0.65h, and the temperature is kept for 5h to obtain the reaction product;

[0053] (5) cooling the reaction product to room temperature, washing it three times with normal temperature distilled water, each time using 18 parts by weight of norma...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for preparing high-purity silicon by an energy-saving and environmental protection technology comprises the following steps: uniformly mixing quartz sand or white carbon black and a reducing agent according to the weight ratio of (0.8-1.2): (1.2-1.6) to obtain a mixture, putting the mixture into a heating furnace with furnace chamber volume being 10-30 liters; spraying carbon powder of 100-325 meshes onto the surface of the mixture with the mass ratio of the carbon power to the mixture being (0.1-0.5): (2.0-2.8); heating the furnace chamber of the heating furnace to 200-260 DEG C for 0.5-1 h, and carrying out thermal insulation for 1-2h; heating the furnace chamber of the heating furnace to 300-400 DEG C for 0.5-1 h, and carrying out thermal reaction for 3-6 h to obtain a reaction product; cooling the reaction product to room temperature, washing the reaction product with normal-temperature distilled water for several times to obtain a washed product; and drying the washed product at the temperature of 90-110 DEG C to obtain elemental silicon. The method is green and environmentally friendly, has advantages of low energy consumption, simple process, low cost and few and simple equipment, and is easy to use at large scale in the industry. In addition, purity of the prepared elemental silicon is high.

Description

technical field [0001] The invention relates to a method for preparing high-purity silicon by using energy-saving and environment-friendly technology. Background technique [0002] The existing method for producing high-purity silicon has the following deficiencies: 1. It pollutes the environment and produces pollutants such as carbon dioxide, trichlorosilane, and silicon tetrachloride during the production process; The reaction temperature is above 1000°C; 3. It is difficult to purify the obtained silicon (polysilicon, single crystal silicon); 4. The preparation process is complicated (more reaction steps), and the production cost is high (the price of raw materials is high), The equipment used must be resistant to high temperature and corrosion, and the structure is relatively complex. The above-mentioned lack of stuffing makes it difficult for the existing methods for preparing high-purity silicon to be used on a large scale in industry. Contents of the invention [0...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B33/025
CPCC01B33/025C01P2002/72C01P2002/82C01P2004/03Y02P20/10
Inventor 汪徐春丁竹成张雪梅方迪陈俊明陈忠平宋常春陈士夫
Owner ANHUI SCI & TECH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products