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A kind of semi-polar LED epitaxial structure and preparation method thereof

An epitaxial structure, semi-polar technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult material quality, affecting luminous efficiency, complex process, etc., and achieve the effect of low cost and strong operability

Active Publication Date: 2019-04-16
QUANZHOU SANAN SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, polar GaN-based LED technology has been industrialized for more than 20 years, and its performance has been greatly improved since its development; however, the performance bottleneck of polar LEDs has gradually emerged. After the photoelectric conversion efficiency reaches 60%, it is difficult to increase significantly. continue to improve
At present, it is generally believed that polar LED devices have an insurmountable polarization effect, which affects the luminous efficiency of LEDs.
There have been a lot of research and literature reports on semipolar and nonpolar materials and devices in recent years. The main problem is that it is difficult to grow GaN materials on semipolar or nonpolar surfaces.
The first technical route is more difficult to obtain better material quality; the second technical route can obtain higher material quality, but the cost is high
In addition, there is a technology with relatively complicated process to realize the growth of semi-polar or non-polar plane by selective epitaxy, and then grow semi-polar or non-polar plane on these in-situ grown semi-polar planes. Devices; the process is relatively complex, and often requires some auxiliary materials and secondary epitaxial growth process design

Method used

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  • A kind of semi-polar LED epitaxial structure and preparation method thereof
  • A kind of semi-polar LED epitaxial structure and preparation method thereof
  • A kind of semi-polar LED epitaxial structure and preparation method thereof

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Embodiment 1

[0038] Please refer to Figure 1~Figure 5 , this embodiment provides a method for fabricating a GaN semipolar LED epitaxial structure, which can avoid the problems of poor growth of semipolar materials and expensive homogeneous semipolar materials. The following technical scheme takes the nano-sapphire graphic substrate as an example, and the manufacturing method includes the following steps:

[0039] Please refer to figure 1 , provide a nano-patterned sapphire substrate 11 (Sapphire), put it into a metal-organic chemical vapor deposition (MOCVD) device and heat it up to 1000-1200°C, and treat it in a hydrogen atmosphere for 3-10 minutes; use a nano-patterned sapphire substrate The bottom (PSS, Patterned Sapphire Substrate) can obtain a regular surface V-shaped pit (pit) array. The pattern line diameter of PSS is 100~1000nm, the pattern height is 300~2000nm, and the pitch is 1 / 5~1 / of the period size. 2. The pattern under this size does not affect the existing chip manufactu...

Embodiment 2

[0045] Please refer to Figure 5 , an LED epitaxial structure provided in this embodiment includes, from bottom to top, a sapphire substrate 11, a buffer layer 12, a nano The semiconductor bottom structure of the V-shaped pit, the semiconductor functional layer 16 including SLs / MQWs / pAlGaN / pGaN / p++ and the electrode structure (not shown in the figure).

[0046] Specifically, the sapphire substrate 11 of this embodiment may be a patterned sapphire substrate (PSS, Patterned Sapphire Substrate), or a flat sapphire substrate (FSS, Flat Sapphire Substrate), and the PSS substrate is preferred in this embodiment , the pattern line diameter is 100~1000nm, the pattern height is 300~2000nm, and the pitch is 1 / 5~1 / 2 of the period size. The pattern under this size does not affect the existing chip manufacturing process to prepare the chip, that is, it does not affect the subsequent chip electrode Preparation and other photolithography processes, if the pattern line size is too small (100...

Embodiment 3

[0051] Please refer to Image 6 , the difference between this embodiment and embodiment 1 is that the surface of the semiconductor functional layer 16 in embodiment 1 has a nano V-shaped pit, while the semiconductor functional layer 26 of this embodiment includes a first semiconductor functional layer 261 and a second semiconductor functional layer 262 , wherein the first semiconductor functional layer 261 includes SLs, MQWs, and pAlGaN, and the growth method is the same as in Embodiment 1, that is, by accelerating the growth rate on the semipolar plane to 5 to 10 times that of the normal polar plane or prolonging the growth time to the normal polar plane. 5 to 10 times the surface of the surface to obtain nano-V-shaped pits on the surface of the first semiconductor functional layer; the second semiconductor functional layer 262 includes pGaN and p++, and adopts the conventional p-type GaN growth mode (the growth temperature is around 950°C, usually into a large amount of H 2...

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Abstract

The invention provides a semi-polarity LED epitaxial structure and a preparation method therefor. The preparation method comprises the processing steps of providing a sapphire substrate; growing a semiconductor bottom layer structure on the sapphire substrate to form nanometer V-shaped pits in the surface, wherein the side face of each V-shaped pit is a semi-polarity surface and corresponding to (1-101) crystal plane family; and growing a semiconductor functional layer on the semi-polarity surface of the semiconductor bottom layer structure. According to the preparation method, selective area epitaxy and secondary epitaxy are not required; the semi-polarity surface is the (1-101) crystal plane family; the overlapped area of the smooth conduction band bottom and valence-band maximum is quite large in a reciprocal space, so that the radiation composite efficiency is greatly improved; the exposing of the semi-polarity surface is realized by adjusting the material growth process without being limited by the geometrical shape of the substrate; therefore, the low cost of the semi-polarity surface material is realized; and the semi-polarity LED epitaxial structure is high in processing fusion degree with the existing chip.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a semipolar LED epitaxial structure and a preparation method thereof. Background technique [0002] LED is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. At present, polar GaN-based LED technology has been industrialized for more than 20 years, and its performance has been greatly improved since its development; however, the performance bottleneck of polar LEDs has gradually emerged. After the photoelectric conversion efficiency reaches 60%, it is difficult to increase significantly. continue to improve. At present, it is generally believed that polar LED devices have an insurmountable polarization effect, which affects the luminous efficiency of LEDs. There have been a lot of research and literature reports on semipolar and nonpolar mater...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/00
CPCH01L33/0075H01L33/20
Inventor 杜成孝郑建森张洁徐宸科
Owner QUANZHOU SANAN SEMICON TECH CO LTD