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High-power chip heat radiation device manufacturing method

A chip heat dissipation and manufacturing method technology, which is applied in the direction of modification through conduction heat transfer, cooling/ventilation/heating modification, modification using liquid cooling, etc., can solve problems such as chip burnout and heat dissipation difficulties, and achieve good isothermal performance and heat transfer. High thermal efficiency and low internal thermal conductivity

Inactive Publication Date: 2016-06-15
SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is: for the high heat flux density of high-power chips existing in the prior art (that is, high-power chips need better heat dissipation to ensure the normal operation of the chips, otherwise the chips are easy to burn due to poor heat dissipation) , the problem of difficult heat dissipation, providing a method for manufacturing a high-power chip heat sink

Method used

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  • High-power chip heat radiation device manufacturing method
  • High-power chip heat radiation device manufacturing method
  • High-power chip heat radiation device manufacturing method

Examples

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Embodiment 1

[0036] Step 1: Use a laser or a water jet to process micro-channels on the diamond copper top plate and the diamond copper bottom plate; the maximum height difference w between the edge of the diamond copper top plate and the middle part, and the maximum height difference w between the diamond copper bottom plate and the middle part;

[0037] Step 2: Set a liquid phase change layer on the inner wall of the middle part of the diamond copper bottom plate and the diamond copper top plate; set a vent hole on the edge of the diamond copper top plate; the vent hole is used for injecting the working medium, and it will be sealed and not opened after injection

[0038] Step 3: Weld the edge of the diamond copper bottom plate and the edge of the diamond copper top plate to form a welded workpiece with a steam chamber;

[0039] Step 4: Use a leak detector to detect whether the welding place in step 3 meets the airtight requirements; if the welding requirements are met, perform step 5; ot...

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Abstract

The invention relates to the field of microelectronic heat radiation, and particularly relates to a high-power chip heat radiation device manufacturing method. In view of technical problems of high heat flux density and difficult heat radiation of the high-power chip existing in the prior art, the invention provides the high-power chip heat radiation device manufacturing method. A high-thermal conductivity diamond copper composite material is adopted as a heat sink for heat radiation of a high-power semiconductor, microfluidic channels are designed on the heat sink of the diamond copper, through liquid phase transition layers, a welding technology is adopted to form a steam chamber, vacuum pumping is then carried out, a working medium is injected, shell nosing is finally carried out, the high-power chip is directly welded on a diamond copper carrier with the steam chamber, the high thermal conductivity of the diamond copper and the liquid phase transition are used for heat radiation, and the heat radiation efficiency of the high-power chip is improved.

Description

technical field [0001] The invention relates to the field of microelectronic heat dissipation, in particular to a manufacturing method of a high-power chip heat dissipation device. Background technique [0002] High-power semiconductor chips have particularly high heat dissipation requirements, and at the same time, the thermal expansion coefficient of chip materials is relatively low. Traditional AlSiC, copper, molybdenum copper, tungsten copper and other metals cannot meet their heat dissipation and process matching requirements at the same time. The micro-channel heat dissipation structure of high-power modules is mostly made of metal materials such as aluminum, copper, silicon-aluminum, etc. These materials have a thermal expansion coefficient that cannot match the chip. At the same time, the thermal conductivity of these materials is not high enough, and the heat dissipation effect is not obvious. Microchannel heat dissipation requires liquid to flow in and out of the j...

Claims

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Application Information

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IPC IPC(8): H05K7/20
CPCH05K7/2029H05K7/20509
Inventor 季兴桥何国华吴昌勇
Owner SOUTHWEST CHINA RES INST OF ELECTRONICS EQUIP
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