Semiconductor device and method of forming the same

Abstract

The invention provides a semiconductor device and a formation method thereof. The formation method includes: a substrate is formed; a grid electrode structure is formed on the substrate; the substrate and the grid electrode structure are covered by a protective layer used for protecting the grid electrode structure; grooves are formed in the substrate at two sides of the grid electrode structure; the grooves are filled with semiconducting materials to form stress layers; ion doping of the semiconducting materials is performed to form source regions and drain regions; and after the step of the covering of the protective layer and before the step of forming the stress layers via the filling of the semiconducting materials, the formation method of the semiconductor device also includes: performing dry cleaning of the semiconductor device by employing fluorine-containing gas. According to the semiconductor device and the formation method thereof, a lot of defects generated after epitaxial growth can be avoided, the yield in the manufacturing process of the devices can be effectively increased, and the manufacturing cost of the device is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] In the existing manufacturing process of semiconductor devices, the carrier mobility is usually improved by introducing stress into the channel region of the MOS device, thereby improving the performance of the MOS device. [0003] For PMOS devices, embedded silicon germanium technology is used to form source and drain regions to generate compressive stress in the channel region of the device, thereby improving carrier mobility. The so-called embedded silicon germanium technology refers to the formation of grooves in the regions where the source region and the drain region need to be formed on the semiconductor substrate, and then filling the grooves with silicon germanium material as a stress layer. Lattice mismatch creates compressive stress on the channel region. In a specific proces...

AI Technical Summary

Problems solved by technology

[0004] However, in the prior art, after the epitaxial growth of boron-doped silicon germanium, the surface of the semiconductor device is prone to residues, thereby forming defects

This kind of defect is easy to block the contact between devices in the subsequent process, so these defects have a great impact on device yield and yield

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