Low voltage control device for rural power grid
A low-voltage, rural power grid technology, applied in the direction of circuit devices, harmonic reduction devices, AC network voltage adjustment, etc., can solve the problems of three-phase imbalance, increase the output voltage of transformers, and low voltage, so as to reduce complexity and The effect of lower cost, higher output voltage, and stable output voltage
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Embodiment 1
[0028] figure 1 It is the first preferred structure of the present invention, such as figure 1 As shown, T1 is the distribution transformer of the rural power grid. The dynamic reactive power compensation part of this device is composed of triodes Q1-Q6 to form a three-phase IGBT bridge. The AC side of the IGBT bridge is connected to the output of the distribution transformer T1 through reactors L1-L3 On the bus, the DC side of the IGBT bridge is the DC capacitors C1, C2, Q7-Q12 constitute the three-phase IGBT bridge of the voltage regulation part, and the output is connected to the series transformer T2 through the filter reactance L4-L6. According to the load current of the remote user, dynamically adjust the SPWM waveform of Q7-Q12, so that the voltage output to the series transformer can compensate the voltage drop lost on the cable of the remote user, and ensure that the voltage of the remote user side is in the positive range of the nominal voltage In the minus 10% rang...
Embodiment 2
[0031] figure 2 It is the second preferred structure of the present invention, such as figure 2 As shown, the dynamic reactive power compensation device is composed of thyristor switching capacitors, which can perform reactive power and unbalanced switching management; rely on the uncontrolled rectifier bridge composed of diodes D1-D6 to rectify and generate DC, Q7-Q12 The IGBT bridge of the voltage regulating part is the same as the scheme shown in Embodiment 1. Certain harmonics will be generated during the operation of the rectifying bridge, but because the capacity of the voltage regulating part is very small, the deterioration of the total harmonics is not obvious. But it can reduce the complexity and cost of the system.
Embodiment 3
[0033] image 3 is the third preferred structure of the present invention, such as image 3 As shown, the dynamic reactive power compensation device can adopt a three-phase bridge with a three-level structure, that is, each bridge arm can be composed of Q1-Q4 and D1, D2. Taking such measures can reduce the voltage level of semiconductor devices and improve the switching efficiency. Frequency, thereby reducing the capacity of L1-L3 and the cost of the reactor. The dynamic voltage regulation device is the same as in Embodiment 1 and 2. The IGBT bridge of the voltage regulation part composed of Q7-Q12 can maintain three voltage because of its small output capacity. Half-bridge scheme.
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