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Flake oxide graphene GO free from high temperature oxidation process and preparation method thereof

A high-temperature oxidation and graphene technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., to achieve the effect of narrow thickness distribution range, good application prospects, and high oxidation degree

Active Publication Date: 2016-06-29
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, so far, the preparation of sheet-like graphene oxide GO by the Hummers method without high-temperature oxidation process has not been reported.

Method used

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  • Flake oxide graphene GO free from high temperature oxidation process and preparation method thereof
  • Flake oxide graphene GO free from high temperature oxidation process and preparation method thereof
  • Flake oxide graphene GO free from high temperature oxidation process and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] In step 1, 115 mL of concentrated H 2 SO 4 Put it in a conical flask, place the conical flask in a low-temperature thermostat, cool down to 0°C and keep the temperature for 35min; Add 5g of graphite, 5g of sodium nitrate and 15g of potassium permanganate in sequence, and stir at a constant temperature of 0°C to obtain a mixed solution;

[0031] Step 2: Under stirring conditions, the temperature of the mixture is raised to 25°C at a heating rate of 3°C / min, and the stirring is continued for 3 hours;

[0032] Step 3, under stirring conditions, continue to heat the mixture to 35°C at a heating rate of 3°C / min, continue to stir and keep it warm for oxidation for 2 hours;

[0033] Step 4: Under stirring conditions, cool the mixed solution to 0 °C at a cooling rate of 3 °C / min, then keep stirring and keep the temperature constant for 2 hours, then add 400 mL of deionized water to the mixed solution at a rate of 20 mL / min, interval After 30min, continue to add 60mLH to the ...

Embodiment 2

[0037] In step 1, 115 mL of concentrated H 2 SO 4 Put it in a conical flask, place the conical flask in a low-temperature thermostat, cool down to 0°C and keep the temperature for 35min; Add 5g of graphite, 5g of sodium nitrate and 15g of potassium permanganate in sequence, and stir at a constant temperature of 0°C to obtain a mixed solution;

[0038] Step 2: Under stirring conditions, the temperature of the mixture is raised to 25°C at a heating rate of 3°C / min, and the stirring is continued for 3 hours;

[0039] Step 3, under stirring conditions, continue to heat the mixture to 35°C at a heating rate of 3°C / min, continue to stir and keep warm for oxidation for 0.5h;

[0040] Step 4: Under stirring conditions, cool the mixed solution to 0 °C at a cooling rate of 3 °C / min, then keep stirring and keep the temperature constant for 2 hours, then add 400 mL of deionized water to the mixed solution at a rate of 20 mL / min, interval After 30min, continue to add 60mLH to the mixtur...

Embodiment 3

[0044] In step 1, 115 mL of concentrated H 2 SO 4 Put it in a conical flask, place the conical flask in a low-temperature thermostat, cool down to 0°C and keep the temperature for 35min; Add 5g of graphite, 5g of sodium nitrate and 15g of potassium permanganate in sequence, and stir at a constant temperature of 0°C to obtain a mixed solution;

[0045] Step 2: Under stirring conditions, the temperature of the mixture is raised to 25°C at a heating rate of 3°C / min, and the stirring is continued for 3 hours;

[0046] Step 3, under the condition of stirring, continue to heat the mixed solution to 35°C at a heating rate of 3°C / min, continue to stir and keep it warm for oxidation for 1h;

[0047] Step 4: Under stirring conditions, cool the mixed solution to 0 °C at a cooling rate of 3 °C / min, then keep stirring and keep the temperature constant for 2 hours, then add 400 mL of deionized water to the mixed solution at a rate of 20 mL / min, interval After 30min, continue to add 60mLH...

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Abstract

The invention discloses a flake oxide graphene GO free from a high temperature oxidation process and a preparation method thereof. The method comprises the following steps: by using natural graphite as a carbon source, and using sodium nitrate, potassium permanganate, sulfuric acid and hydrogen peroxide as oxidizing agents, an improved Hummers method is used to control the adding order and speed of the oxidizing agents, the oxidation time is modulated in mid temperature (35 DEG C), the oxidation stage is removed at a high temperature (98 DEG C and more), the effects that the oxidizing agents are sufficiently contacted with the graphite and the oxidation is sufficient are achieved so as to prepare the uniform flake GO. The GO prepared through the method disclosed by the invention is high in oxidation degree, the size and separation degree of the GO flakes are controllable, the preparation time is short, the requirement to experiment equipment is reduced, and the adaptability thereof is further improved.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to a sheet-like graphene oxide GO without a high-temperature oxidation process and a preparation method thereof. Background technique [0002] Carbonaceous materials play an important role in the history of human civilization and are important raw materials for human survival. The complete carbon family includes three-dimensional diamond, two-dimensional graphite, one-dimensional carbon nanotube, and zero-dimensional fullerene, which constitute the basic carbon family. Since the discovery of graphene by the University of Manchester in 2004, carbon There is one more important member of the family, and a wave of research on graphene has been set off in various fields. [0003] Graphene is the thinnest two-dimensional material in the world. Perfect graphene is composed of regular hexagonal lattice with a thickness of only 0.335nm and has many excellent properties. First of all, each...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04B82Y40/00
CPCC01B2204/04C01P2002/72C01P2002/82C01P2004/04
Inventor 谈国强赵程程夏傲任慧君
Owner SHAANXI UNIV OF SCI & TECH
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