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Epitaxial structure of light emitting diode and preparation method of epitaxial structure

A technology of light-emitting diodes and epitaxial structures, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency of light-emitting diodes, and achieve the effects of increasing the contact area, improving luminous efficiency, and increasing the luminous area

Active Publication Date: 2016-06-29
EPITOP PHOTOELECTRIC TECH
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Problems solved by technology

[0005] The invention provides an epitaxial structure of a light-emitting diode and a preparation method of the epitaxial structure, which solves the problem of low luminous efficiency of the light-emitting diode caused by the defects of the sapphire substrate and gallium nitride itself, and improves the luminous efficiency of the light-emitting diode

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  • Epitaxial structure of light emitting diode and preparation method of epitaxial structure
  • Epitaxial structure of light emitting diode and preparation method of epitaxial structure
  • Epitaxial structure of light emitting diode and preparation method of epitaxial structure

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Embodiment Construction

[0042] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0043] In the prior art, in sapphire (Al 2 o 3 The epitaxial structure of gallium nitride GaN light-emitting diodes grown on the substrate has the following problems: first, the lattice constant of sapphire is different from that of GaN, and the lattice mismatch is relatively large, resulting in more non-radiative recombination (ie The energy re...

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Abstract

The invention provides an epitaxial structure of a light emitting diode and a preparation method of the epitaxial structure. The epitaxial structure of the light emitting diode, provided by the invention, comprises a U-shaped GaN layer, an N-type GaN layer, a functional layer, a light emitting layer and a P-type GaN layer which are sequentially grown on a substrate from bottom to top, wherein the functional layer is doped with a silicon element, an aluminum element and an indium element. With the epitaxial structure of the light emitting diode, provided by the invention, the luminous efficiency of the light emitting diode is improved, the capability of resisting static breakdown by the light emitting diode is enhanced, and the service lifetime of the light emitting diode is prolonged.

Description

technical field [0001] The invention relates to electronic manufacturing technology, in particular to an epitaxial structure of a light emitting diode and a growth method of the epitaxial structure. Background technique [0002] A light-emitting diode is a common photonic device, and its core part is a chip composed of a P-type semiconductor and an N-type semiconductor. There is a transition layer between the P-type semiconductor and the N-type semiconductor, which is called a PN junction. In the PN junction of some semiconductor materials, when the injected minority carriers recombine with the majority carriers, the excess energy will be released in the form of light, thereby directly converting electrical energy into light energy. [0003] Light-emitting diodes are an epitaxial structure produced by epitaxial growth. The epitaxial structure is mainly composed of a substrate, an N-type layer that provides electrons, a P-type layer that provides holes, and an active layer in...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/04H01L33/00
CPCH01L33/0075H01L33/04
Inventor 霍丽艳
Owner EPITOP PHOTOELECTRIC TECH
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