Different-dimensionality high-heat-conductivity material enhanced and polymer based composite and preparation method thereof
A composite material and high thermal conductivity technology, applied in the field of composite materials, can solve the problems of difficult to achieve effective control of mechanical properties such as hardness, strength, thermal expansion coefficient of composite materials, small volume, low hardness of graphene, etc., to improve the two-phase interface Many, improve the effect of heat conduction efficiency
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Embodiment 1
[0041] Example 1: One-dimensional diamond wire reinforced epoxy resin matrix composite material
[0042] A straight tungsten wire with a diameter of 0.4mm is selected as the linear core material, and a high thermal conductivity diamond film is grown on its surface, that is, as a linear thermal conductivity material, and compounded according to the following steps:
[0043] (1) Carry out preliminary treatment on the surface of W core material: that is, use acetone ultrasonic treatment to remove surface oil and stains, and ultrasonic acetone solution to plant seed crystals;
[0044] (2) The diamond film is deposited by hot wire CVD. The deposition process parameters are: hot wire distance 6mm, substrate temperature 800°C, hot wire temperature 2200°C, deposition pressure 3KPa, CH 4 / H 2 The volume flow ratio is 1:99, and the deposition time is controlled to obtain a diamond film thickness of 60 μm, that is, to obtain a cored diamond wire;
[0045] (3) The cored diamond rod is p...
Embodiment 2
[0047] Example 2: Two-dimensional diamond sheet reinforced epoxy resin matrix composite material
[0048] Choose Cu foil with a diameter of 0.05mm as the metal substrate, and grow a high thermal conductivity diamond film on its surface, that is, as a sheet-shaped thermal conductivity material, and compound it according to the following steps:
[0049] (1) Pre-treatment of the surface of Cu foil: that is, ultrasonic treatment with acetone to remove surface oil and stains; and use magnetron sputtering process to sputter Mo film on the surface with a thickness of 300nm; finally plant seed crystals in ultrasonic acetone solution deal with;
[0050] (2) The diamond film is deposited by hot wire CVD. The deposition process parameters are: hot wire distance 6mm, substrate temperature 800°C, hot wire temperature 2200°C, deposition pressure 3KPa, CH 4 / H 2 The volume flow ratio is 1:99, and the deposition time is controlled to obtain a diamond film thickness of 300 μm, that is, diamo...
Embodiment 3
[0055] A three-dimensional network woven with copper wires is selected as the metal substrate, the mesh is a regular hexagonal hole, the porosity is 90%, the diameter of the mesh is 0.2mm, and a high thermal conductivity diamond film is grown on the surface, which is used as a three-dimensional network thermal conductivity material. The following steps are compounded:
[0056] (1) Pre-treatment the surface of the copper wire braided three-dimensional network substrate: that is, use acetone ultrasonic treatment to remove surface oil and stains; and use the magnetron sputtering process to sputter Mo / W film on the surface, the thickness is 200nm / 200nm respectively ; Finally, seed crystals are planted in an ultrasonic acetone solution;
[0057] (2) The diamond film is deposited by hot wire CVD. The deposition process parameters are: hot wire distance 6mm, substrate temperature 800°C, hot wire temperature 2200°C, deposition pressure 3KPa, CH 4 / H 2 The volume flow ratio is 1:99, ...
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