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Etching Method And Etching Apparatus

A technology of etching treatment and mounting table, which is used in the manufacture of discharge tubes, electrical components, semiconductor/solid-state devices, etc.

Active Publication Date: 2016-07-06
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The higher the aspect ratio becomes, the easier it is to generate depth loads

Method used

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  • Etching Method And Etching Apparatus
  • Etching Method And Etching Apparatus
  • Etching Method And Etching Apparatus

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Embodiment Construction

[0039] Hereinafter, modes for implementing the present invention will be described with reference to the drawings. In addition, in this specification and drawing, the same code|symbol is attached|subjected to the structure which is substantially the same, and a repeated description is abbreviate|omitted.

[0040] [Overall configuration of etching processing equipment]

[0041] First, regarding the etching processing apparatus 1 according to one embodiment of the present invention, refer to figure 1 Be explained. figure 1 An example of a longitudinal cross section of the etching processing apparatus 1 according to this embodiment is shown. The etching processing apparatus 1 according to this embodiment is a parallel plate type plasma processing apparatus (capacitively coupled plasma processing apparatus) in which a mounting table 20 and a gas shower head 25 are arranged facing each other in a chamber 10 . The mounting table 20 also functions as a lower electrode, and the g...

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Abstract

An etching method is provided. In the etching method, a temperature of a chiller configured to cool a pedestal is controlled so as to become -20 degrees C. or lower. Plasma is generated from a hydrogen-containing gas and a fluoride-containing gas supplied from a gas supply source by supplying first high frequency power having a first frequency supplied to the pedestal from a first high frequency power source. A silicon oxide film deposited on a substrate placed on the pedestal is etched by the generated plasma. Second high frequency power having a second frequency lower than the first frequency of the first high frequency power is supplied to the pedestal from a second high frequency power source in a static eliminating process after the step of etching the silicon oxide film.

Description

technical field [0001] The present invention relates to an etching treatment method and an etching treatment device. Background technique [0002] A method of etching a high aspect ratio hole of a silicon oxide film has been proposed (for example, refer to Patent Document 1). For example, Patent Document 1 provides a dry etching method that does not deposit a film on the inner wall of a chamber in order to form an opening with a high aspect ratio and shorten the time required for a cleaning step of an etching device. [0003] In addition, as an example of a method of etching a hole with a high aspect ratio of a silicon oxide film, the use of C 4 f 8 / C 4 f 6 / Ar / O 2 The gas system is used, and the temperature of the wafer is set to a high temperature, so that the reaction product is not attached to the opening of the hole as much as possible, and the hole is etched. [0004] prior art literature [0005] patent documents [0006] Patent Document 1: Japanese Patent Ap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/311
CPCH01J37/32H01J37/32082H01J37/32091H01J37/321H01L21/311H01L21/31116H01J37/32165H01J37/32724H01L21/31144H01L21/67109H01L21/6831H01L21/02164
Inventor 竹田谅平高岛隆一大矢欣伸
Owner TOKYO ELECTRON LTD