Stable nanowire field effect transistor taking gas as insulation layer and fabrication method of nanowire field effect transistor

Abstract

The invention relates to a stable nanowire field effect transistor taking gas as an insulation layer and a fabrication method of the nanowire field effect transistor. The stable nanowire field effect transistor comprises a grid, a support layer, source-drain electrodes, a micro-nano single-crystal semiconductor and gas gap insulation layers, wherein the grid is a substrate, the support layer is arranged on the grid, one of the source-drain electrodes is arranged on each of the two sides of the upper part of the support layer, and the micro-nano single-crystal semiconductor is arranged between the two source-drain electrodes; the part, under the micro-nano single-crystal semiconductor between the two source-drain electrodes, of the support layer is provided with a plurality of channels in a longitudinal spaced manner, and grooves are formed between every two adjacent channels; and the upper part of the grid, the lower part of the micro-nano single-crystal semiconductor and the grooves at the middle of the support layer form the plurality of gas gap insulation layers. The field effect transistor is more stable in structure, a nanowire is prevented from being collapsed under the effect of an induced electric field, and the problem that the stable nanowire field effect transistor cannot normally work is prevented.

Description

technical field [0001] The invention relates to a field effect transistor and a preparation method, in particular to a stable nanowire field effect transistor with gas as an insulating layer and a preparation method. Background technique [0002] At present, the gate insulating layer plays a crucial role in the preparation of organic micro-nano single crystal field effect transistors. The gate insulators of organic micro-nano single-crystal transistors are mainly limited to silicon dioxide or OTS-modified silicon dioxide. The contact interface between the semiconductor and the insulating layer has a crucial impact on the performance of the sensor device. At the contact interface, phenomena such as carrier confinement, charge doping, molecular (or atomic) reorganization, dipole formation, and chemical interactions at the semiconductor / insulator interface are ubiquitous, thereby degrading the performance of the sensor device. [0003] In 2004, the research team of Rogers and...

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Problems solved by technology

[0004] In view of the above problems, the object of the present invention is to provide a stable nanowire field effect transistor with gas as an insulating layer and its preparation method, which has a stable structure and avoids the collapse of the nanowire under the action of the induced electric field, and causes the device to fail to work. key issues of

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