Metallization method of N-type solar cell, cell, module and system
A solar cell and metallization technology, which is applied in the field of solar cells, can solve the problems of high silver content and reduce the use of silver-containing paste, and achieve the effects of meeting soldering requirements, reducing front silver consumption, and excellent ohmic contact
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0032] Example 1
[0033] See figure 1 , Figure 3 to Figure 6 As shown, an N-type solar cell metallization method in this embodiment includes the following steps:
[0034] (1), such as figure 1 As shown, the N-type double-sided battery before metallization includes an N-type crystalline silicon substrate 10. The front surface of the N-type crystalline silicon substrate 10 includes a p+ doped region 12 from the inside to the outside and a passivation antireflection film on the front surface. 14; The back surface of the N-type crystalline silicon substrate includes an n+ doped region 16 and a back surface passivation film 18 sequentially from the inside to the outside. The passivation anti-reflection film 14 on the front surface is SiO 2 , SiNx or Al 2 O 3 One or more of the dielectric films, the passivation film 18 on the back surface is SiO 2 And SiN x Composite dielectric film composed of dielectric film. The thickness of the N-type crystalline silicon substrate 10 is 50-300 μm;...
Example Embodiment
[0040] Example 2
[0041] See Figure 1 to Figure 6 As shown, an N-type solar cell metallization method in this embodiment includes the following steps:
[0042] (1), such as figure 1 As shown, the N-type double-sided battery before metallization includes an N-type crystalline silicon substrate 10. The front surface of the N-type crystalline silicon substrate 10 includes a p+ doped region 12 and a passivation antireflection film on the front surface from the inside to the outside. 14; The back surface of the N-type crystalline silicon substrate includes an n+ doped region 16 and a back surface passivation film 18 sequentially from the inside to the outside. The passivation anti-reflection film 14 on the front surface is SiO 2 , SiNx or Al 2 O 3 One or more of the dielectric films, the passivation film 18 on the back surface is SiO 2 And SiN x Composite dielectric membrane composed of dielectric membrane. The thickness of the N-type crystalline silicon substrate 10 is 50-300 μm; t...
PUM
Property | Measurement | Unit |
---|---|---|
Width | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap