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Metallization method of N-type solar cell, cell, module and system

A solar cell and metallization technology, which is applied in the field of solar cells, can solve the problems of high silver content and reduce the use of silver-containing paste, and achieve the effects of meeting soldering requirements, reducing front silver consumption, and excellent ohmic contact

Inactive Publication Date: 2016-07-06
TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the silver content in aluminum-doped silver paste is relatively high, and its cost is actually comparable to that of pure silver paste
At present, there is no effective metallization method for the p+ type doped surface, which can greatly reduce the use of silver-containing paste while satisfying low ohmic contact resistance and excellent solderability

Method used

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  • Metallization method of N-type solar cell, cell, module and system
  • Metallization method of N-type solar cell, cell, module and system
  • Metallization method of N-type solar cell, cell, module and system

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Embodiment 1

[0033] see figure 1 , Figure 3 to Figure 6 As shown, a metallization method of an N-type solar cell in this embodiment includes the following steps:

[0034] (1), such as figure 1 As shown, the N-type double-sided battery before metallization is prepared, including an N-type crystalline silicon substrate 10, and the front surface of the N-type crystalline silicon substrate 10 includes a p+ doped region 12 and a passivation anti-reflection film on the front surface in sequence from inside to outside. 14; the back surface of the N-type crystalline silicon substrate includes an n+ doped region 16 and a passivation film 18 on the back surface sequentially from inside to outside. Wherein the passivation anti-reflection film 14 on the front surface is SiO 2 , SiNx or Al 2 o 3 One or more of the dielectric films, the passivation film 18 on the back surface is SiO 2 and SiN x Composite dielectric membrane composed of dielectric membrane. The thickness of the N-type crystallin...

Embodiment 2

[0041] see Figure 1 to Figure 6 As shown, a metallization method of an N-type solar cell in this embodiment includes the following steps:

[0042] (1), such as figure 1 As shown, the N-type double-sided battery before metallization is prepared, including an N-type crystalline silicon substrate 10, and the front surface of the N-type crystalline silicon substrate 10 includes a p+ doped region 12 and a passivation anti-reflection film on the front surface in sequence from inside to outside. 14; the back surface of the N-type crystalline silicon substrate includes an n+ doped region 16 and a passivation film 18 on the back surface sequentially from inside to outside. Wherein the passivation anti-reflection film 14 on the front surface is SiO 2 , SiNx or Al 2 o 3 One or more of the dielectric films, the passivation film 18 on the back surface is SiO 2 and SiN x Composite dielectric membrane composed of dielectric membrane. The thickness of the N-type crystalline silicon su...

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Abstract

The invention relates to a metallization method of an N-type solar cell, the cell, a module and a system. The metallization method of the N-type solar cell comprises the following steps of forming a groove-shaped structure penetrating through a passivation anti-reflection film on the front surface of an N-type silicon-crystal substrate after processing the N-type silicon-crystal substrate; printing a back-surface electrode on the back surface of the N-type silicon-crystal substrate; printing aluminum paste on the groove-shaped structure to form a front-surface auxiliary grid; printing aluminum-doping silver paste or silver paste to form a front-surface main grid; and sintering the front-surface main grid to obtain the N-type solar cell. The metallization method has the advantages that during the metallization on the front surface of the N-type solar cell, the main grid line uses the silver-containing paste, and thus, the welding requirement can be met better; the auxiliary grid line uses the aluminum paste, thus, the auxiliary grid line and a p+ doping surface can be in excellent ohmic contact, and the production cost brought by the paste also can be greatly reduced.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a metallization method of an N-type solar cell, a cell, a component, and a system. Background technique [0002] With the continuous development of photovoltaic technology, photovoltaic cells with high efficiency, high stability and low cost will become the mainstream products pursued by the photovoltaic market. N-type solar cells have the advantages of high conversion efficiency, low light-induced attenuation, good stability, and high cost performance. At the same time, they also have the advantages of double-sided power generation, suitable for building integration and vertical installation, and are receiving more and more attention in the photovoltaic market. . [0003] The most common N-type solar cell structure is a p+ doped layer on the front, N-type silicon on the substrate, and an n+ doped layer on the back. The metallization generally adopts a double-sided H-shaped metal gri...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0224H01L31/18H01L31/042
CPCH01L31/02168H01L31/022441H01L31/042H01L31/18H01L31/1804Y02E10/547Y02P70/50
Inventor 林建伟季根华刘志锋孙玉海张育政
Owner TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD
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