High-linearity stacked-structure radio frequency power amplifier

Abstract

The invention discloses a high-linearity stacked-structure radio frequency power amplifier. The high-linearity stacked-structure radio frequency power amplifier comprises an input matching circuit, an output broadband matching circuit, a bias circuit A, a bias circuit B, and a power amplification circuit at least formed by two connected and stacked transistor drains and sources, wherein a signal source is connected with a grid of a transistor at the bottom of the power amplification circuit through the input matching circuit, and the bias circuit B is also connected with the grid; the bias circuit A is connected with grids of other transistors of the power amplification circuit, the grids are grounded by connecting a grid capacitor, and sources are grounded by connecting LC series circuit; a drain of a transistor at the top of the power amplification circuit is connected with a load through the output broadband matching circuit. According to the circuit structure of the high-linearity stacked-structure radio frequency power amplifier, the linearity and voltage endurance capability of the radio frequency power amplifier are improved; besides, output voltage swing, operating bandwidth, power efficiency, power gain and maximum output power of the radio frequency power amplifier can be also improved, and a greater secondary harmonic suppression effect is also achieved.

Description

technical field [0001] The invention relates to a power amplifier, in particular to a radio frequency power amplifier. Background technique [0002] The RF power amplifier is an important part of the modern wireless communication system, which can amplify the power of the RF signal with very small power without distortion, and then radiate it through the antenna. [0003] As the functional modules of portable devices and the modulation methods of modern communication systems become more and more complex, for example, in order to meet the needs of different users, wireless mobile phones generally support two or more It is required that modern communication systems adopt modulation methods such as QPSK, which requires that power amplifiers used in new generation communication systems must have high power efficiency, linearity and bandwidth. [0004] In addition, as the functional modules of portable devices become more and more complex, integrating each functional module on o...

AI Technical Summary

Problems solved by technology

As the power of the input signal increases, the output voltage signal also becomes larger, which will make the transistor on the uppermost layer of the structure the first to have a breakdown problem

In addition, since the output impedance of the two transistors in the cascode structure is not optimal impedance, the output power is small

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