Czochralski-method-like monocrystal growing device and method

Abstract

The invention discloses a Czochralski-method-like monocrystal growing device and method.The growing device comprises a semicircular heating hearth and a cylindrical transparent growing ampoule matched with the heating hearth, the heating hearth comprises a hearth inner shell and a heating furnace wire wound on the hearth inner shell, an air suction pipe communicated with the inside of the growing ampoule is arranged above the growing ampoule, a portion, extending into the growing ampoule, of the bottom of the air suction pipe is a seed crystal bag, and a round growing ampoule support connected with a rotating device is arranged in the middle of two round side faces of the growing ampoule.The device and the method have the advantages that melt and crystals after growing in conventional growing processes with a Bridgman-Stockbarger method and a gradient condensing method do not contact with outside atmosphere, and requirements on growing of part of crystals having high steam pressure and decomposition pressure can be met; the defect that growing of the crystals with high steam pressure and decomposition pressure cannot be realized through a conventional Czochralski method and the defect that the Bridgman-Stockbarger method and the gradient condensing method cannot control dislocation defect are made up.The crystals grown by the device and the method are high in purity and few in dislocation defect.

Description

technical field [0001] The invention belongs to a crystal growth technology, and in particular relates to a pull-like single crystal growth device and method. The device and method realize the pull-like single crystal growth technology by rotating an airtight ampoule. Background technique [0002] Single crystal growth from melt is the most commonly used method in crystal growth. After years of development and continuous improvement, various crystal growth methods such as pulling method, crucible descent method, gradient condensation method and Kyropoulos method have been derived. , is widely used in the growth of various single crystals. [0003] The pulling method is the most commonly used method in the melt method. The specific method is to heat and melt the raw materials constituting the crystal in a crucible, connect the seed crystal on the surface of the melt and pull the melt, and under controlled conditions, make the seed crystal and the melt continuously carry out ...

AI Technical Summary

Problems solved by technology

However, there are defects such as being easily polluted by the outside world, easily causing leakage caused by volatilization, and being unable to grow single crystals with high decomposition pressure.

The closed ampoule design adopted by the crucible descent method and gradient condensation method can effectively reduce pollution and has the advantages of simple growth process, but it cannot be used for crystal growth with abnormal thermal expansion, and it is difficult to weld the seed crystal, and it is also difficult to control dislocations. quantity

The Kyropoulos method combines some of the advantages of the pulling method and the gradient condensation method, and can control the dislocation density. However, due to the use of an open ampoule environment, external pollution and leakage are still unavoidable.

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