Surface treatment method for crystalline silicon body life test
A technology of surface treatment and body life, applied in semiconductor/solid state device testing/measurement, semiconductor/solid state device manufacturing, electrical components, etc. Achieve good reproducibility and stability
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Embodiment 1
[0023] The surface treatment method for crystalline silicon life test provided by the present invention comprises the following steps:
[0024] First, a crystalline silicon wafer is provided. Crystalline silicon wafers can be n-type or p-type. In this embodiment, a p-type crystalline silicon wafer is provided with a resistivity of 1.8 Ω·cm, a thickness of 140 μm, and a size of 156×156 mm. The other monocrystalline silicon wafer is n-type, its resistivity is 5.5Ω·cm, its thickness is 190μm, and its size is also 156×156mm.
[0025] Then, the two crystalline silicon wafers are subjected to damage removal treatment. Specifically, a potassium hydroxide solution with a mass concentration of 30%-60% and a temperature of 75-85°C is provided, and the crystalline silicon wafer is immersed in the aforementioned potassium hydroxide solution for 8-15 minutes and then rinsed to remove attached particles and oil stains etc., and remove the damaged layer.
[0026] Secondly, clean the two ...
Embodiment 2
[0033] This embodiment provides a p-type crystalline silicon wafer with a resistivity of 1.5 Ω·cm, a thickness of 190 μm, and a size of 156×156 mm. In this embodiment, the p-type crystalline silicon wafer is evenly divided into two small crystalline silicon wafers, and one small crystalline silicon wafer is subjected to damage layer removal, cleaning and passivation at one time using substantially the same method as in the first embodiment. Another small crystalline silicon wafer was de-damaged, cleaned, and passivated with 0.08mol / L iodine ethanol solution (I-E) using conventional methods, sealed in a self-sealing bag, and the center was tested using WT1000 single-point test. The comparison of time changes is shown in the image 3 shown.
[0034] From image 3 It can be seen in the figure that using the conventional I-E passivation method, the test value decreases rapidly within 20 minutes of the test, and continues to decrease after 20 minutes. The test value is unstable a...
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Abstract
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