Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for generating Cu triangular crystals in Cu thin film system

A thin film and system technology, which is used in the field of preparation of Cu triangular crystals

Active Publication Date: 2016-08-17
明石创新(烟台)微纳传感技术研究院有限公司
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, researchers have used different methods to prepare different Cu nanomaterials, such as copper microflowers, copper dendrites, copper nanowires, etc. However, for the method of annealing to produce Cu triangular crystals in Cu thin film systems, Not yet reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for generating Cu triangular crystals in Cu thin film system
  • Method for generating Cu triangular crystals in Cu thin film system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0016] A preparation process for generating Cu triangular crystals in a Ti / Cu / Si(111) film system, the specific steps are as follows:

[0017] Silicon wafer cleaning: use single-side polished (111) silicon wafers as the substrate, and ultrasonically clean them with acetone, absolute ethanol, and deionized water for fifteen minutes before sputtering, and then dry them for half an hour.

[0018] Sputtering: Ti / Cu thin films were prepared using Explorer 14 sputtering machine produced by Denton Vacuum Company of the United States; the Cu target and the Ti target were respectively installed on two DC sputtering target guns, and the purity of the two targets were both 99.999% %. Before sputtering, put the cleaned silicon wafer into the sputtering chamber and evacuate to 2×10 -5 Pa. The sputtering powers of Cu and Ti were 99w and 105W, and the sputtering rates were 0.4nm / s and 0.12nm / s, respectively. A 20nmTi / 70nmCu / Si film (sample) was prepared by means of continuous sputtering b...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The method discloses a method for generating Cu triangular crystals in a Cu thin film system. The method for generating the Cu triangular crystals in the Cu thin film system comprises the following steps: depositing a Cu thin film on a substrate with <111> crystal orientation; then depositing a layer of thin film which has relatively high reducibility and is made of other materials on the Cu thin film so as to prevent the Cu thin film from being oxidized at high temperature; annealing a sample in an inert gas atmosphere by using heat treatment equipment, wherein the annealing temperature is greater than 500 DEG C; and after insulating for a certain time, cooling in a furnace to obtain the Cu triangular crystals. The surfaces of the obtained Cu triangular crystals are in the shape of an equilateral triangle.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials and relates to the preparation of nanometer materials, in particular to a preparation method for generating Cu triangular crystals in a Cu thin film system. Background technique [0002] With the development of micro-nano technology, micro-nano materials have broad application prospects in the fields of catalysis, optoelectronics, and microelectronics due to their optical, electrical, and magnetic properties different from bulk materials. Since the physical and chemical properties of micro-nano materials strongly depend on their size or shape, the control of their shape and size has always been a technical difficulty in the field of new materials. At present, people have developed a variety of methods, such as hydrothermal method, electrochemical deposition method, metal organic compound thermal decomposition method, microemulsion method, etc., and successfully prepared micro-nano mate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/58C23C14/14
CPCC23C14/14C23C14/5806
Inventor 林启敬蒋庄德王琛英杨树明赵娜伍子荣
Owner 明石创新(烟台)微纳传感技术研究院有限公司