Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Transparent conductive film and manufacturing method thereof

A technology of transparent conductive film and conductive film, which is applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, equipment for manufacturing conductive/semiconductive layer, etc. Low, damage to the surface of flexible substrates and other issues

Active Publication Date: 2018-09-21
SUMITOMO ELECTRIC INTERCONNECT PROD SHENZHEN LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the sputtering process, the temperature will rise and damage the surface of the flexible substrate, the film formation rate is lower than that of vacuum evaporation, and it is easily affected by impurity gases
In addition, the bonding force between the substrate and the conductive film is poor, basically lower than 0.5N / mm

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transparent conductive film and manufacturing method thereof
  • Transparent conductive film and manufacturing method thereof
  • Transparent conductive film and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] This embodiment relates to an undoped metal oxide type transparent conductive film.

[0078] First, a glass with a thickness of 500 μm is selected as a transparent substrate. Then, a conductive layer is formed on the surface of the glass using a processing method of ion implantation followed by plasma deposition.

[0079] In the process of ion implantation, ZnO is selected as the vacuum cathode arc target, the process temperature of ion implantation is controlled to 600 ℃, and the vacuum is drawn to 2×10 -1 To 5×10 -5 Pa. Control ion implantation energy is 50-100keV, implantation dose is 1.0×10 17 To 5.0×10 17 ion / cm 2 , So that the lower surface of the ion implantation layer is located at a depth of 5-50 nm below the surface of the glass.

[0080] In the plasma deposition process, ZnO is still selected as the vacuum cathode arc target material, the deposition energy of the plasma is controlled to be 1-1000 eV, and a plasma deposition layer with a thickness of about 10-1000 n...

Embodiment 2

[0083] This embodiment relates to a metal oxide doped transparent conductive film of a binary system.

[0084] First, a PI film with a thickness of 6-200 μm is selected as the transparent substrate. Then, a first conductive layer and a second conductive layer are sequentially formed on the surface of the PI film, wherein the first conductive layer is ZnO with a thickness of 5-500 nm, and the second conductive layer is Al or Ag with a thickness of 5-500 nm.

[0085] When preparing the first conductive layer (ZnO), a treatment method of ion implantation followed by plasma deposition is adopted. In the process of ion implantation, ZnO is selected as the target material, the process temperature of ion implantation is controlled to 600℃, and the vacuum is reduced to 2×10 -1 To 5×10 -5 Pa. Control ion implantation energy is 50-100keV, implantation dose is 1.0×10 17 To 5.0×10 17 ion / cm 2 , So that the lower surface of the ion implantation layer is located at a depth of 5-50 nm below the ...

Embodiment 3

[0089] This embodiment relates to a ternary system metal oxide doped transparent conductive film.

[0090] First, a PET film with a thickness of 10-200 μm is selected as the transparent substrate. Then, a first conductive layer and a second conductive layer are sequentially formed on the surface of the PET film, wherein the first conductive layer is MgO 2 -TiO 2 Doped structure, the second conductive layer is In 2 O 3 .

[0091] In the preparation of the first conductive layer (MgO 2 -TiO 2 ), use MgO 2 -TiO 2 The target material is used as a vacuum cathode arc target material, and a processing method of ion implantation followed by plasma deposition is adopted. The target material is prepared by the high-temperature sintering method, that is, the MgO with an average particle diameter of 1 μm or less 2 Powder and TiO 2 The powder is blended and granulated in a high-temperature furnace with an atomic ratio of 1:1, and a certain pressure (8ton / cm 2 ) Shape the produced powder, and th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a transparent conductive film and a manufacturing method thereof. The transparent conductive film includes the steps of conducting pre-processing on a transparent base material (10), and conducting ion injection and / or plasma deposition on the surface (12) of the transparent base material by using a target material to form a conducting layer (14) on the surface (12) of the transparent base material.

Description

Technical field [0001] The invention relates to a transparent conductive film and a manufacturing method thereof. The conductive film can be widely used in transparent electrodes of solar cells, liquid crystal displays, gas sensors, antistatic coatings, anti-frost and fog glass for windshields of airplanes and automobiles, and energy-saving glass windows for buildings and Electrochromic devices, etc. Background technique [0002] As one of the main materials in the field of optoelectronic technology, transparent conductive film (TCO) has been widely used in solar cell transparent electrodes, liquid crystal displays, gas sensors, antistatic coatings, anti-frost and fog glass for aircraft and automobile windshields, and energy-saving glass for construction Windows and electrochromic devices, etc. In practical applications, the transparent conductive film is required to have good visible light transmittance (above 80%) and low resistivity (less than 10 -3 Ω·cm). At present, transp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00H01B5/14
CPCH01B5/14H01B13/0026
Inventor 王志建陈啸龙张金强杨志刚
Owner SUMITOMO ELECTRIC INTERCONNECT PROD SHENZHEN LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com