A Bipolar Organic Field Effect Transistor with Vertical Laminated Structure

Abstract

The invention discloses a bipolar organic field effect transistor with a vertical lamination structure, which belongs to the field of microelectronic organic devices. At this stage, the carrier mobility of bipolar organic field effect transistors with horizontal structure is not ideal, and it is far from meeting the requirements of modern integrated circuit technology. The present invention proposes a bipolar organic field effect transistor with a vertical stacked structure. A structure in which an N-type active layer and a P-type active layer are vertically stacked is formed by a photolithography method, and consists of a substrate, a gate electrode, a gate dielectric layer, The active layer and the source and drain electrodes are composed and stacked in sequence. This structure increases the interface between N-type and P-type active layers, increases the dissociation rate of excitons at the interface, and thus increases carrier mobility. A bipolar organic field effect transistor with a vertical stacked structure can provide a new idea for preparing high-performance bipolar field effect transistors, which may have a significant impact on the development of organic discrete devices.

Description

technical field [0001] The invention belongs to the field of microelectronic organic devices, in particular to a bipolar organic field effect transistor with a vertical stacked structure. Background technique [0002] Organic Field Effect Transistor (OFET) has a series of advantages: it can be made into a large-area device, it is easy to adjust the performance of many materials, the preparation process is simple, the cost is low, and it has good flexibility. In recent years, the emergence of high-performance and multifunctional OFETs has made a breakthrough in the research of OFETs. The research of OFET is to lay the foundation for the realization of all organic circuits, so the research of bipolar organic field effect transistor (AOFET) is more urgent and urgent. AOFET means that there are both electron and hole channels in a single device. AOFET is mainly divided into three structures: single-layer bipolar material, planar heterojunction (PHJ) and bulk heterojunction (BHJ...

AI Technical Summary

Problems solved by technology

Most of the PAOFETs reported so far are stacked with N-type and P-type active layers in a horizontal structure. This structure cannot ensure sufficient dissociation of excitons at the interface between N-type and P-type active layers, resulting in low carrier mobility.

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