Full CMOS single-pole double-throw switch circuit

Abstract

The invention relates to a single-pole double-throw switch (SPDT) structure and specifically a single-pole double-throw switch structure which adopts CMOS technologies. The single-pole double-throw switch structure adopts the CMOS technologies and is high in isolation degree, low in power capacity and low in loss. The single-pole double-throw switch structure belongs to the field of switches in a CMOS radio frequency integrated circuit. According to the single-pole double-throw switch structure, a grid end and a body end of a transistor are subjected to floating bias operation, the grid end and the body end of the transistor are earthed via a large resistor, and the transistor is enabled to transmit large power signals. The single-pole double-throw switch structure adopts drain-source floating voltage bias technologies, and the transistor can be prevented from periodically switched on due to large signals of a drain end and a source end when being in a switched off state. The single-pole double-throw switch structure adopts earth inductance technologies, and loss reduction of a whole CMOS single-pole double-throw switch is enabled. The CMOS single-pole double-throw switch provided in the invention can realize watt grade power capacity, transmission loss can be effectively reduced, and high isolation degree can be fulfilled. The single-pole double-throw switch designed in the invention is simple in structure and excellent in performance and can be well applied to the field of radio frequency integrated circuits, and the single-pole double-throw switch is critical technology for realizing a full integration radio frequency circuit.

Description

technical field [0001] The invention relates to a low-loss, high-power-capacity, high-isolation all-CMOS single-pole double-throw switch (SPDT) circuit, which is applied to the field of radio frequency circuits, especially the fields of fully integrated radio frequency circuits, communication SOCs and the like. Background technique [0002] The performance of a single-pole double-throw switch is measured by three indicators: power capacity (the maximum power that can be transmitted during transmission), loss (the loss of signal power caused by the single-pole double-throw switch during transmission and reception), and isolation (When sending and receiving, the degree of isolation between the sending end and the receiving end). In the case of selecting a SPDT switch, the power capacity of the switch determines the maximum transmission power of the entire RF system, the loss reflects the signal power loss caused by the switch on the signal chain, and the isolation reflects the...

AI Technical Summary

Problems solved by technology

[0003] In the CMOS process, silicon-based semiconductors have the characteristics of low electron mobility and low substrate resistivity. Therefore, CMOS single-pole double-throw switches have the characteristics of small power capacity, insufficient isolation, and large losses. Power handling with low loss and high isolation

Researchers at home and abroad have done a lot of research on CMOS single-pole double-throw switches with high power capacity, low loss, and high isolation, but single-pole double-throw switches with watt-level power capacity are extremely rare

Images