Light control-based organic spin memory cell

Abstract

The invention provides a light control-based organic spin memory cell. A structure of the memory cell comprises the following components from bottom to up in order: a bottom electrode, a ferromagnetic metal layer 1, an organic nonferromagnetic layer, a ferromagnetic metal layer 2, and a top electrode; the bottom electrode comprises one or more of gold, platinum, copper or other nonferromagnetic metal materials; the ferromagnetic metal layer 1 comprises one or more of iron, cobalt, nickel, cobalt-iron-boron, nickel-iron, lanthanum strontium manganese oxide, Heusler alloy or other ferromagnetic materials; the nonferromagnetic layer organic material comprises aluminum tris-(8-hydroxyquinoline) (Alq3), alpha-sexithiophene (6T) or other photosensitive organic materials; the ferromagnetic metal layer 2 comprises one or more of cobalt, cobalt-iron, cobalt-iron-boron, Heusler alloy or other ferromagnetic materials; the top electrode comprises one or more of gold, platinum, copper or other nonferromagnetic metal materials.

Description

【Technical field】 [0001] The invention relates to an organic spin storage unit based on light regulation, which is used for realizing optical writing of a storage state, and belongs to the technical field of spin storage. 【Background technique】 [0002] In recent years, emerging memory technologies are attracting more and more attention and are beginning to replace the traditional memory industry. The most successful of these is the spin transfer torque magnetic random access memory (STT-MRAM), which not only has a high read and write speed, but also has a higher integration level, a smaller leakage current, and a power-down The advantage of not losing information later. The spin-transfer torque magnetic random access memory has gradually started large-scale industrial production and entered the market. [0003] At present, a commonly used memory cell structure in the field of spin memory devices is the spin valve. Its basic structure is a vertically stacked ferromagnetic ...

AI Technical Summary

Problems solved by technology

[0005] 1. During the writing process, a large magnetic field is required to realize the magnetization reversal of the ferromagnetic electrode, and a large magnetic field requires a large external current, which leads to a significant write power consumption of the device

[0006] 2. Due to the hysteresis effect of the ferromagnetic electrodes, the rate of change of the magnetic field is limited, so the memory device has a large write delay

[0007] 3. With the integration and miniaturization of device units, the magnetic fields of adjacent storage units may affect each other, which requires more precise regulation of the magnetic field, thus increasing the difficulty and cost of manufacturing the device

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