A kind of insulating medium layer etching method and metal layer conduction connection method

Abstract

The invention relates to an insulating medium layer etching method and a metal layer conduction connection method. Utilizing the principle of different surface deposition rates of deposits on different media in the vapor deposition method, the reaction gas used for vapor deposition is reasonably selected to meet the requirements of the gas phase deposition process. The deposition rate on the upper surface of the metal layer is greater than the deposition rate on the upper surface of the insulating dielectric layer, so that the thickness of the barrier layer generated on the upper surface of the wafer is greater than the thickness of the upper surface of the insulating dielectric layer, thereby forming a barrier layer on the upper surface of the wafer In the plasma etching of the insulating dielectric layer, the thickness difference between the upper surface of the metal dielectric layer and the barrier layer on the upper surface of the insulating dielectric layer can be used to effectively protect the metal layer on the upper surface of the wafer from being etched, and avoid metal splashes causing plasma The etching reaction chamber is polluted by metal, which improves the stability of the plasma etching reaction chamber, and the whole process can be carried out in the plasma etching reaction chamber without a photomask, which simplifies the process flow and reduces the process cost.

Description

Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an insulating dielectric layer etching method and a metal layer conduction connection method. Background technique [0002] At present, the etching in the semiconductor manufacturing process mostly adopts the patterning process associated with photolithography, and the process flow involves the coating of photoresist and the preparation of the photomask; for the conduction connection process of different levels of metal layers, in order to To prevent metal splashing, photoresist is usually applied multiple times with an anti-reflective layer, and multiple etchings are used to realize the conduction connection of different levels of metal layers. The process flow is cumbersome, and at least two photomasks need to be prepared, and the process cost is high . Summary of the invention [0003] The purpose of the present invention is to provide an insulating dielectric l...

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Problems solved by technology

[0002] At present, the etching in the semiconductor manufacturing process mostly adopts patterning processing related to photolithography, and the process involves the coating of photoresist and the preparation of photomask; for the conduction and connection process of different layers of metal layers, in order to To prevent metal spatter, photoresist is usually applied multiple times with an anti-reflection layer, and multiple etchings are performed to realize the conduction connection of different layers of metal layers. The process is cumbersome, and at least two layers of photomasks need to be prepared.

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