An intelligent igbt constant current driving device

Abstract

The invention discloses an intelligent IGBT constant current drive device, which comprises an isolated DC-DC module, a PLD digital control module, a DAC digital-to-analog conversion module, a controlled constant current source, a voltage comparison logic circuit, a gate-level current acquisition circuit and Current comparison logic circuit. The driving power and driving signal of the primary side control part provide isolated driving power and driving signal for the secondary side through the isolated DC-DC module, and the alarm signal of the secondary side provides an isolated alarm signal for the primary side through the isolated DC-DC module; The output terminals of the driving signal, the voltage comparison logic circuit and the current comparison logic circuit are connected to the input terminal of the PLD digital signal, the output of the PLD is connected to the input of the DAC digital-to-analog conversion module, and the output of the DAC digital-to-analog conversion module and the subtraction circuit is connected to the controlled constant The input of the current source is connected, and the output of the controlled constant current source is connected to the gate level of the IGBT through the driving resistor Rg. The device of the present invention takes PLD digital control as the core, and can adjust the output of the control loop according to the difference in parameters of different types of IGBTs, so as to realize the optimal control of different series and types of IGBTs.

Description

technical field [0001] The invention relates to an IGBT drive circuit, in particular to an intelligent IGBT constant current drive device. Background technique [0002] With the rapid development of power electronics technology and semiconductor technology, power electronics technology continues to penetrate into new fields. The insulated gate bipolar transistor IGBT (Insulated Gate Bipo1ar Transistor) not only has the advantages of fast working speed, high input impedance, simple drive circuit and good thermal stability of MOSFET, but also includes the advantages of large carrying capacity and high blocking voltage of GTR. Advantages, it is an ideal switching device to replace GTR. Therefore, its application range in modern power electronics technology is becoming more and more extensive. Today, the rated current and rated voltage of IGBT have been increased to 3600A and 6500V respectively, and modern megawatt-level converters composed of high-power IGBTs are widely used ...

AI Technical Summary

Problems solved by technology

As the capacitor voltage rises, the charging current will inevitably decrease, especially in the Miller plateau stage, the difference between the gate capacitor voltage and the charging voltage is already very small, and the charging current is also relatively small, so it is impossible to reduce the switching delay to the greatest extent. and Miller plateau times, reducing switching losses

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