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A kind of metal element Mg doped VO2 thin film and preparation method thereof

A metal element, VO2 technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of reduced light modulation ability, reduced film transmittance, and widened thermal hysteresis loop , to achieve the effects of enhanced light modulation ability, reduced density, and enhanced modulation ability

Active Publication Date: 2019-06-11
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the doping of W element can effectively reduce the phase transition temperature, the doping of W element will also lead to VO 2 The transmittance of the film decreases, the thermal hysteresis loop becomes wider, and the light modulation ability becomes smaller
Its application in the fields of smart windows and energy-saving buildings is limited

Method used

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  • A kind of metal element Mg doped VO2 thin film and preparation method thereof
  • A kind of metal element Mg doped VO2 thin film and preparation method thereof
  • A kind of metal element Mg doped VO2 thin film and preparation method thereof

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Embodiment 1-3

[0035] The coating equipment that the present invention adopts is the MSP-3200 three target co-sputter coating machine that Beijing Chuangshi Weina Science and Technology Co., Ltd. assembles, is base with quartz glass, metal vanadium target is radio frequency target, metal magnesium target is direct current target, oxygen ( 99.99%), the reaction gas is feedback controlled by the plasma emission spectrometer monitoring system (PEM), argon is the working gas (99.99%), the background vacuum value is -5 Pa, the RF power is 300W, the DC power is 25W, 30W and 40W respectively, the working pressure is 0.5 Pa, and the quartz substrate is heated to 470°C;

[0036] The steps of the inventive method are illustrated below:

[0037] 1) Put the quartz sheet on the graphite plate and send it into the reaction chamber; 2) Vacuum the reaction chamber to a vacuum degree 2 The thin film is tested by the V-VASE ellipsometer of J.A.Woollam Company in the United States, and the VO is obtained by mod...

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Abstract

The invention relates to a VO2 thin film doped with the metallic element Mg and a preparation method thereof. The VO2 thin film doped with the metallic element Mg is provided with nano air holes distributed irregularly and the main phase is a monoclinic phase; the crystal orientation (011) is a crystal face; and the crystalline grain size is 90-165 nm. The VO2 thin film doped with the metallic element Mg and the preparation method thereof have the beneficial effects that the metallic element Mg is evenly doped into the VO2 thin film, the air holes are formed in the surface of the obtained doped VO2 thin film, the density is reduced, and the hole diameter is reduced along with the increasing of the Mg doping concentration; since the air holes are formed in the surface of the thin film, the density of the thin film is reduced, the transmittance of the visible near-infrared band is increased, and the light modulation capability is enhanced.

Description

technical field [0001] The invention relates to a metal element Mg doped VO 2 The method of film preparation. Specifically, using the MSP-3200 three-target co-sputtering coating machine, with O 2 is the reaction gas, Ar is the working gas, the metal vanadium target is the radio frequency reaction target, the metal magnesium target is the direct current reaction target, and the metal element Mg doped VO is prepared by co-sputtering at high temperature. 2 The thin film method belongs to the field of preparation of inorganic thin film materials. Background technique [0002] VO 2 It is a thermally induced phase change material that undergoes a reversible phase transition from monoclinic phase (M phase) to tetragonal phase (R phase) at around T = 68°C. It has become a popular phase change material in recent years because its phase transition temperature is close to room temperature. Research hotspots. Studies have shown that VO 2 The phase change is accompanied by sudden c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/34
CPCC23C14/0036C23C14/08C23C14/3464
Inventor 王盼盼章俞之张云龙彭明栋吴岭南宋力昕
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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