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CMOS image sensor anti-latch-up system based on space application

An image sensor, anti-latch technology, applied in radiation control devices and other directions, can solve the problems of device function failure, prone to latch-up, burnout, etc., to reduce the probability of latch-up, the power-on process is stable and reliable, fast detection and protective effect

Inactive Publication Date: 2018-11-06
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention provides a CMOS image sensor anti-latch-up system based on space applications to solve the problem that the CMOS image sensor in the existing space application is prone to latch-up, resulting in device function failure or even burning.

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  • CMOS image sensor anti-latch-up system based on space application

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specific Embodiment approach 1

[0015] Specific implementation mode 1. Combination figure 1 and figure 2 Describe this embodiment, based on the CMOS image sensor anti-latch-up system for space applications, the system can quickly detect the latch-up phenomenon, cut off the power supply or reduce the supply voltage to be insufficient to maintain the regeneration of the parasitic circuit and the latch-up state.

[0016] Specifically, it is composed of an external input power supply, a processing part and a focal plane part. The processing part is mainly composed of controller, current detection module, comparator, controller core power supply module, controller IO power supply module, controller peripheral circuit power supply module, level conversion chipset and differential interface chipset; the controller core power supply module and the controller IO power supply module supply power to the core and IO of the controller respectively, and the controller peripheral circuit power supply module supplies powe...

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Abstract

CMOS image sensor anti-latch-up system based on space application, relates to a CMOS image sensor anti-latch-up system, which solves the problem that the CMOS image sensor in the existing space application is prone to latch-up, leading to device function failure or even burning, including external input Power supply, processing part and focal plane part, the external input power supplies power to the processing part and focal plane part at the same time; the processing part includes controller, current detection module, comparator, controller core power supply module, controller IO power supply module, controller peripheral Circuit power supply module, level conversion chipset and differential interface chipset; the focal plane part includes n sets of protection resistors, n sets of voltage conversion chips and reference source circuits; after the output voltage of the external input power supply is stable, each part is powered on in time to reduce DC The inrush current of the / DC module power supply system; the controller first has the core and then the IO and the last peripheral part, to avoid the output voltage falling during the rising process when all parts are powered on at the same time, and to ensure the stable and reliable power on of the controller.

Description

technical field [0001] The invention relates to an anti-latch system of a CMOS image sensor, in particular to an anti-latch system of a CMOS image sensor based on space applications. Background technique [0002] At present, compared with CCD image sensors, CMOS image sensors have the advantages of not requiring external drivers, analog-to-digital conversion circuits, small size and low power consumption, but they are prone to latch-up in space environment applications, resulting in device function failure or even burning. Low-dropout power supply chips such as MAX883 have a current-limiting protection function. When the voltage difference is greater than 0.7V and the output voltage is greater than 0.8V, the maximum output current is 430mA; when the output voltage is lower than 0.8V, the maximum output current is 170mA. However, the thermal protection function of the device at 160°C uses the principle that the conduction voltage of the PN junction of the transistor decreases...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/146
Inventor 余达刘金国郭永飞司国良宁永慧马天波王灵杰
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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