TFT substrate and manufacturing method thereof
A manufacturing method and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as difficulty in controlling etching uniformity, difficulty in achieving high resolution, damage to semiconductor layers, etc., and achieve low production costs , Reduce production cost, good electrical performance effect
Inactive Publication Date: 2016-09-28
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
[0004] At present, the commonly used structure of oxide semiconductor thin film transistors is the structure with Etching Stop Layer (ESL). The electrode and the source / drain overlap, the storage capacitance is large, and it is difficult to achieve high resolution, etc.
[0005] Compared with the etch barrier structure, the Back Channel Etch (BCE) structure has the advantages of simple preparation process and has become one of the important technical methods for preparing oxide thin film transistors. However, the current back channel etching process The source / drain etching will cause damage to the semiconductor layer, affect the electrical properties and the process is more cumbersome
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[0057] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.
[0058] see figure 1 , the present invention at first provides a kind of manufacture method of TFT substrate, comprises the following steps:
[0059] Step 1. Please refer to Figure 2-3 , provide a substrate 10, deposit a metal layer 11 on the substrate 10, use a photomask to pattern the metal layer 11, obtain data lines 21, gate lines 22, and connect to the gate lines 22 For the gate 23 on one side, the data line 21 crosses the gate line 22 , and the gate line 22 is disconnected at the intersection, and the two ends of the disconnection are respectively located on both sides of the data line 21 .
[0060] Specifically, the substrate 10 is a glass substrate.
[0061] Specifically, the metal layer 11 is a single-layer metal layer or a multi-l...
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The invention provides a TFT substrate and a manufacturing method thereof. The manufacturing method of the TFT substrate of the present invention can save a photomask by making the data line, the gate line, and the gate on the same layer, and form a plurality of via holes and pixels in the TFT substrate by using a halftone photomask The electrode can save one photomask, so compared with the prior art, the present invention can save two photomasks, reduce production cost, save process time, improve production efficiency, and will not cause electrical damage to the semiconductor layer during the process. The TFT substrate of the invention has simple manufacturing process, low production cost and good electrical performance.
Description
technical field [0001] The invention relates to the technical field of thin film transistors, in particular to a TFT substrate and a manufacturing method thereof. Background technique [0002] Thin Film Transistor (TFT for short) is currently the main driving element in Liquid Crystal Display (LCD for short) and Active Matrix Driven Organic Light-Emitting Diode (AMOLED for short) , is directly related to the development direction of high-performance flat panel display devices. [0003] Oxide Semiconductor (Oxide Semiconductor) has been widely used in thin film transistors due to its high electron mobility, amorphous structure, and high compatibility with amorphous silicon manufacturing processes. The conduction band of an oxide semiconductor thin film transistor is formed by overlapping S orbitals of metal ions, and the crystal form of the oxide semiconductor (polycrystalline or amorphous) has little effect on the mobility. At present, oxide semiconductor thin film transis...
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Login to View More IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1214H01L27/1259
Inventor 李子然
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD