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Manufacturing method of semiconductor device, semiconductor device and electronic device
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A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as unstable yield and fracture, avoid aluminum fracture problems, reduce production costs, The effect of improving the yield rate
Active Publication Date: 2016-10-05
SEMICON MFG INT (SHANGHAI) CORP
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[0005] In the wafer-level packaging process using rear vias, the yield rate (yield) is found to be unstable through wafer testing, and the lowest yield rate is only about 15%. Through analysis, it is found that most of the failure points have fracture (open) problems. According to the slice results, the reason is that the aluminum loss (AL loss) on the side wall of the TSV leads to the fracture (open), such as figure 1 As shown, it is a SEM photo of a device with a fracture after wafer testing. It can be seen from the figure that there is basically no aluminum (AL) on the sidewall at a depth of about 30% from the top of the via (via), resulting in breakage
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Embodiment 1
[0038] Combine below Figure 3A ~ Figure 3G The manufacturing method of the semiconductor device of the present invention is described in detail.
[0039] First, if Figure 3A As shown, a wafer 300 is provided, on which a trench 301 for subsequently forming TSVs is formed, and an aluminum metal layer (or metal film) 302 is formed covering the sidewall and bottom of the trench 301 and the wafer 300 .
[0040] Wafer 300 may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), germanium-on-insulator Silicon (SiGeOI) and germanium-on-insulator (GeOI), etc., form semiconductor devices on the wafer 300 , such as PMOS and NMOS transistors. The TSV 301 can be formed by etching, and the etching process can adopt a common method in the field.
[0041] The aluminum metal layer 302 is formed by common methods in the field. As an example, in this embodiment, physical vapor depositi...
Embodiment 2
[0054] The present invention also provides a semiconductor device manufactured by the method described in Embodiment 1, which is manufactured by the above method, thus having a high yield rate and relatively reducing the production cost of the semiconductor device.
Embodiment 3
[0056] The present invention further provides an electronic device including the aforementioned semiconductor device.
[0057] Since the included semiconductor device is packaged at wafer level, it has the advantages brought by this process, and because the above method is used for packaging, the yield rate is high and the cost is relatively low, so the electronic device also has the above advantages.
[0058] The electronic device can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP, etc. It is an intermediate product with the above-mentioned semiconductor device, for example: a mobile phonemotherboard with the integrated circuit, etc. In this implementation, take PDA as an example, such as Figure 4 shown.
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Abstract
The present invention provides a manufacturing method of a semiconductor device, which includes: providing a wafer, the wafer has a trench for forming through-silicon vias; aluminum metal layer; forming a protective layer on the aluminum metal layer; coating a photoresist layer on the protective layer; exposing and developing the photoresist layer to form a preset pattern; The adhesive layer is used as a mask to remove the exposed protective layer to expose the aluminum metal layer to be removed; remove the photoresist layer; use the protective layer as a mask layer to perform wet etching to remove the aluminum metal layer to be removed Aluminum metal layer. The manufacturing method of the semiconductor device of the present invention does not increase the complexity of the process and the cost of the process too much, and can avoid the problem of aluminum fracture, greatly improves the yield rate, and relatively reduces the manufacturing cost.
Description
technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a manufacturing method of a semiconductor device, a semiconductor device and an electronic device. Background technique [0002] In the field of consumerelectronics, multi-function devices are more and more popular with consumers. Compared with devices with simple functions, the production process of multi-function devices will be more complicated. For example, multiple chips with different functions need to be integrated on the circuit board, so the 3D integrated circuit (integrated circuit, IC) technology is defined, and 3D integrated circuit (integrated circuit, IC) is defined as a system-level integrated structure, where multiple chips are stacked in a vertical plane direction, thereby saving space. [0003] 3D stacked packaging has great advantages in shortening interconnection length, reducing form factor, and improving electrical performance. Wafer-Level P...
Claims
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