Method of improving the interface performance of insulating layer and metal diffusion barrier layer

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving the performance of the interface between an insulating layer and a metal diffusion barrier layer, which can be applied to the process of preparing a metal structure in the insulating layer. After performing the etching process in the insulating layer , perform a silicon repair process on the remaining insulating layer to effectively improve the huge loss of carbon in the insulating layer during the above etching process, and at the same time maintain the hydrophobic properties of the insulating layer surface, thereby improving the barrier between the insulating layer and the metal The bonding performance between the layers keeps the dielectric constant of the insulating layer stable, so as to reduce the leakage current of the final device product and improve the yield of the product.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for improving the performance of the interface between an insulating layer and a metal diffusion barrier layer. Background technique [0002] During the preparation of semiconductor devices, when metal structures are prepared in the dielectric layer, due to the easy diffusion of metals (such as aluminum (Al)) to the dielectric layer (especially porous low dielectric constant (porous low k), super In the dielectric layer with low dielectric constant (ultra low-k, referred to as ULK)), it will cause leakage problems, so it is necessary to set a barrier film between the dielectric layer and the metal to prevent the metal from diffusing into the dielectric layer. [0003] In the traditional process, when an etching process is performed on the dielectric layer to form a metal-filled groove structure, in order to prevent the metal from diffusing into the d...

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Problems solved by technology

[0003] In the traditional process, when an etching process is performed on the dielectric layer to form a metal-filled groove structure, in order to prevent the metal from diffusing into the dielectric layer, it is necessary to cover the exposed surface of the dielectric layer with a metal diffusion barrier layer, and then the metal The above-mentioned groove structure is filled; however, existing etching processes such as dry etching and / or wet etching will cause certain damage to the retained dielectric layer, which will greatly affect the insulation and leakage current of the dielectric layer And other properties, resulting in the final preparation of the device can not meet the process requirements

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