Atmospheric pressure diffusing discharge device and method for depositing SiO2-like thin film on metal surface

Abstract

The invention relates to an atmospheric pressure diffusing discharge device and a method for depositing a SiO2-like thin film on a metal surface. The atmospheric pressure diffusing discharge device comprises a pin electrode, a metal base and a gas mixing chamber, wherein the pin electrode is vertically placed, and the top end of the pin electrode is connected to a high-voltage pulse power source; the metal base is arranged below the pin electrode and is grounded; the gas mixing chamber is arranged above one end of the metal base, and a gas spraying port is formed in one side of the gas mixing chamber and faces a deposition area; the gas mixing chamber is in the shape of a cylinder or a cube and is made from an insulating material; and the gas mixing chamber is connected with a gas bubbling device through a mixed gas outputting pipe. The atmospheric pressure diffusing discharge device is simple and convenient to operate, discharge plasmas which are wide in range and uniform can be obtained on the metal surface under the relatively simple conditions of room temperature, atmospheric environment and the like, and the defects that due to a traditional discharge mode, the thin film deposition range is small and uniformity is poor are overcome.

Description

technical field [0001] The invention relates to an atmospheric pressure diffuse discharge device and a SiO-like metal surface deposition 2 Thin film method. Background technique [0002] SiO 2 The physical and chemical properties of the film are outstanding, with excellent corrosion resistance, friction resistance and electrical insulation properties. It is widely used in food packaging, metal anti-corrosion and microelectronics production and other fields. In addition, SiO 2 The film also has a large dielectric constant (about 3.9) and high dielectric strength (10 6 -10 7 V / cm), it has outstanding advantages in improving the electric field distribution on the surface of the conductor and suppressing micro-discharge. Therefore, in the context of the rapid development of UHV long-distance direct current transmission, the deposition of SiO on the surface of conductors 2 The method of improving the withstand voltage level of power transmission and transformation equipment...

AI Technical Summary

Problems solved by technology

Among them, the glow-like DBD discharge under atmospheric conditions has the advantages of uniform discharge and high energy density, but the harsh deposition conditions lead to poor discharge stability during the deposition process, and the discharge electrode is easy to develop into a filament mode under the condition of a metal substrate.

The high energy density of discharge filaments will etch the substrate, which is not conducive to uniform film deposition

However, the low energy density of corona discharge cannot provide sufficient energy for the vapor deposition reaction, resulting in low deposition efficiency.

In addition, radio frequency and microwave discharge depend on expensive experimental equipment and are complicated to operate. In addition, the electromagnetic radiation generated during the deposition process will also cause harm to the surrounding environment, so it is not suitable for industrial production

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