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Near-ultraviolet photopotentiometric sensor with fast photoelectric recovery response and preparation method thereof

A near-ultraviolet light and sensor technology, which is applied in the field of sensors, can solve problems such as the need for shading sheets, and achieve the effect of stable chemical properties and simple structure

Active Publication Date: 2017-05-24
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention is to solve the problem that the existing narrow-bandgap semiconductor ultraviolet photoelectric potential-sensitive sensor needs a light-shielding sheet, and provides a wide-bandgap semiconductor-based ultraviolet / near-ultraviolet position-sensitive sensor and its preparation method

Method used

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  • Near-ultraviolet photopotentiometric sensor with fast photoelectric recovery response and preparation method thereof
  • Near-ultraviolet photopotentiometric sensor with fast photoelectric recovery response and preparation method thereof
  • Near-ultraviolet photopotentiometric sensor with fast photoelectric recovery response and preparation method thereof

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specific Embodiment approach 1

[0026] Specific Embodiment 1: The near-ultraviolet photopotential sensor with fast photoelectric recovery response in this embodiment has a metal oxide-SiC structure, and a metal oxide layer with a thickness of 10-60 nm is deposited on a β-SiC substrate by laser pulses, wherein The metal oxide is Fe 3 o 4 , Al-ZnO, In 2 o 3 or F-SnO 2 .

specific Embodiment approach 2

[0027] Embodiment 2: This embodiment differs from Embodiment 1 in that a metal oxide layer with a thickness of 15-30 nm is deposited on the β-SiC substrate by laser pulses.

specific Embodiment approach 3

[0028] Specific embodiment three: The preparation method of the near-ultraviolet photoelectric potential sensitive sensor with fast photoelectric recovery response in this embodiment is implemented according to the following steps:

[0029] 1. The metal oxide powder is pressed into tablets by a mold, and then sintered at 900-1100°C to obtain a metal oxide target;

[0030] 2. Place the β-SiC substrate in deionized water, acetone and absolute ethanol in order to ultrasonically clean it for 10-20 minutes, respectively, to obtain the cleaned SiC substrate;

[0031] 3. Vacuum the background to 3×10 -4 Pa~5×10 -4 Pa, take the cleaned SiC substrate as the deposition substrate, feed pure oxygen to control the air pressure to 0.01-20Pa, adjust the temperature of the SiC substrate to 300-500°C, and use the excimer laser to irradiate the metal oxide target, control The single pulse energy is 100-200mJ, and the pulse frequency is 1-5Hz for pulse laser deposition of metal oxide layer. Af...

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Abstract

A near-ultraviolet photoelectric position-sensitive detector with quick photoelectric recovery response and a preparation method thereof of the invention relate to the field of detectors. The invention aims to solve the problem that the existing narrow-bandgap semiconductor ultraviolet photoelectric position-sensitive detector needs a shade. The near-ultraviolet photoelectric position-sensitive detector has a metal oxide-SiC structure, and a metal oxide layer is deposited on a beta-SiC substrate by laser pulse, wherein the metal oxide is Fe3O4, Al-ZnO, In2O3 or F-SnO2. The preparation method comprises the following steps: S1, tabletting metal oxide powder to prepare a metal oxide target material; S2, cleaning a beta-SiC substrate; and S3, using a excimer laser to irradiate the metal oxide target material, and depositing a metal oxide layer on the substrate by laser pulse. A SiC wide-bandgap semiconductor adopted by the invention is responsive only in an ultraviolet / near-ultraviolet area, so no shade is needed. Moreover, the detector is highly position-sensitive.

Description

technical field [0001] The invention belongs to the field of sensors, and in particular relates to an ultraviolet photoelectric potential-sensitive sensing material based on a lateral photovoltaic effect and a preparation method thereof. Background technique [0002] At the beginning of the last century, Schottky discovered the lateral photovoltaic effect on semiconductor structures, and then in 1957, Wallmark discovered for the first time that there is a high linear dependence between the magnitude of the lateral photovoltaic voltage and the light position in the p+-n junction relationship (Proc.IRE,1957,45,474.), which makes the lateral photovoltaic effect widely used in position-sensitive detectors (position-sensitive detectors, PSD) and other optical sensors (Appl.Phys.Lett.,1986,49, 1537.; Appl. Phys. Lett., 1986, 49, 663). High position sensitivity and fast photoelectric response are the core indicators of position sensitive sensors. At present, Si-based photoelectri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0312H01L31/032H01L31/109H01L31/18
CPCH01L31/0312H01L31/032H01L31/109H01L31/18Y02P70/50
Inventor 王先杰宋炳乾宋波隋郁胡昌
Owner HARBIN INST OF TECH
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