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Preparation method of antireflection film

A technology of anti-reflection film and reflective film, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve the problems of difficulty in meeting market demand, low production efficiency of preparation methods, etc., and achieves good industrial application prospects , The effect of improving photoelectric conversion efficiency, reducing energy consumption and pollution

Inactive Publication Date: 2016-10-12
王小雪
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the production efficiency of the preparation method is not high, and it is difficult to perform a one-time complete molding process on the silicon wafer, which is difficult to meet the needs of the market.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] An anti-reflection film, the anti-reflection film has an amorphous structure, the refractive index of the anti-reflection film is 2.24, and the specific steps are:

[0029] Cleaning of silicon wafers: After the polished silicon wafers are evenly mixed with 100L of 85% ethanol solution and 100L of acetone, they are ultrasonically cleaned for 20 minutes under the condition of 500W. Silicon surface oxide layer, then boiled with NaOH solution for 20 minutes, HCl solution for 10 minutes, rinsed with cold deionized water to pH7.0, dried for later use;

[0030] Anti-reflection film growth, put the clean silicon wafer into the RF-PECVD furnace, discharge voltage 790V, discharge current 140mA, H 2 :N 2 =2:1, SiO with a particle size of 8nm under the condition of working pressure of 100Pa 2 The colloidal solution and the SiC colloidal solution with a particle size of 6nm are mixed under the condition of a volume ratio of 2:1, and the cleaned silicon wafer is deposited. The depo...

Embodiment 2

[0033] An anti-reflection film, the anti-reflection film has an amorphous structure, the refractive index of the anti-reflection film is 2.23, and the specific steps are:

[0034] Cleaning of silicon wafers: After the polished silicon wafers are evenly mixed with 100L of 85% ethanol solution and 100L of acetone, they are ultrasonically cleaned for 20 minutes under the condition of 500W. Silicon surface oxide layer, then boiled with NaOH solution for 20 minutes, HCl solution for 10 minutes, rinsed with cold deionized water to pH7.0, dried for later use;

[0035] Anti-reflection film growth, put the clean silicon wafer into the RF-PECVD furnace, discharge voltage 700V, discharge current 100mA, H 2 :N 2 =2:1, SiO with a particle size of 8nm under the condition of working pressure of 100Pa 2 The colloidal solution and the SiC colloidal solution with a particle size of 5nm are mixed under the condition of a volume ratio of 2:1, and the cleaned silicon wafer is deposited for depos...

Embodiment 3

[0038] An anti-reflection film, the anti-reflection film has an amorphous structure, the refractive index of the anti-reflection film is 2.24, and the specific steps are:

[0039] Cleaning of silicon wafers: After the polished silicon wafers are evenly mixed with 100L of 85% ethanol solution and 100L of acetone, they are ultrasonically cleaned for 20 minutes under the condition of 500W. Silicon surface oxide layer, then boiled with NaOH solution for 20 minutes, HCl solution for 10 minutes, rinsed with cold deionized water to pH7.0, dried for later use;

[0040] Antireflection film growth, put the clean silicon wafer into the RF-PECVD furnace, discharge voltage 800V, discharge current 250mA, H 2 :N 2 =2:1, SiO with a particle size of 9nm under the condition of working pressure of 100Pa 2 The colloidal solution and the SiC colloidal solution with a particle size of 7.5nm are mixed under the condition of a volume ratio of 2:1, and the cleaned silicon wafer is deposited. The dep...

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PUM

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Abstract

The invention discloses a preparation method of an antireflection film. The antireflection film of a solar cell panel is prepared by a plasma chemical vapor deposition method, wherein the antireflection film is prepared by mixing an SiO2 colloidal solution and an SiC colloidal solution; the volume ratio of the SiO2 colloidal solution to the SiC colloidal solution is 2 to 1; the particle size of SiO2 in the SiO2 colloidal solution is 8-10nm; the particle size of SiC in the SiC colloidal solution is 5-8nm; the antireflection film is of an amorphous structure; and the refractive index of the antireflection film is 2.23-2.25. The preparation method is good in preparation effect, energy-saving, efficient and reliable in quality; and a silicon wafer is not damaged.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a preparation method of an anti-reflection film. Background technique [0002] In the production of optical thin films for modern photovoltaic cells, anti-reflection coatings surpass all other types of film systems. In the absence of anti-reflective coatings, many instruments cannot function properly due to the loss of light reflection or the high "glare" effect of the substrate. In recent years, with the wide application of thin film materials in the field of photovoltaic cell technology, chemical vapor deposition (CVD) preparation of thin film technology has been greatly developed. CVD technology originated in the 1960s. Due to the advantages of simple equipment, easy control, high purity of prepared powder materials, narrow particle size distribution, continuous and stable production, and low energy consumption, it has gradually become an important powder. Body prepara...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/02168Y02E10/50Y02P70/50
Inventor 苏天平
Owner 王小雪