Secondary dry etching method based on nanoimprint grating and epitaxial wafer and laser

Abstract

The invention relates to a secondary dry etching method based on a nanoimprint grating, and an epitaxial wafer and a laser. The method comprises steps: through an ultraviolet nanoimprint technology, a grating pattern is imprinted on a photoresist coating the surface of the epitaxial wafer; the well-imprinted epitaxial wafer is fed into a reaction chamber of an inductively coupled plasma (ICP) device for primary etching, wherein the reaction gas is CH4 / H2 / Ar; and the epitaxial wafer with the primary etching completed is fed to the reaction chamber for secondary etching, wherein the reaction gas is CH4 / H2 / Ar. As the secondary dry etching method is adopted, that is, continuous two times of dry etching are carried out on the GaInP grating, an excellent grating topography can be obtained through adjusting and optimizing parameters such as the etched gas flow ratio, the chamber pressure and the etching time.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lasers, relates to a secondary dry etching process, and more specifically relates to a secondary dry etching method based on nanoimprinted gratings and an epitaxial wafer and a laser produced therefrom. Background technique [0002] Distributed feedback lasers (DFB) add Bragg gratings inside the laser to realize optical feedback. Due to the selective effect of the gratings, the output spectral linewidth is much narrower than that of ordinary lasers, and it can stabilize single-mode oscillation. The side-mode suppression ratio and power characteristics of a DFB laser are closely related to the coupling coefficient of the grating, and the coupling coefficient of the grating is determined by factors such as the shape, filling factor, and depth of the grating. Therefore, the characteristics of the grating directly affect the performance of the DFB laser. Therefore, grating preparation is a cruc...

AI Technical Summary

Problems solved by technology

Chlorine-based gas system is easy to generate non-volatile InCl x Reaction product, not conducive to selective etching

The hydrocarbon group generates volatile etching products, which can precisely control the etching depth, but during the etching process, a large amount of polymer will be deposited on the surface of the sample to hinder the further etching, and the chamber will The pressure and ICP power parameters also have a great influence on the etching morphology of the grating

The problem in the current grating etching process is that it is difficult to obtain a smooth and clean grating morphology, and the polymer deposited on the grating surface is not easy to remove, so many defects are introduced, which have a significant impact on the threshold current and optical power

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