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Resistive memory and measurement system for measuring the resistive memory

A resistive memory and measurement technology, applied in the field of measurement systems, can solve problems such as the inability to control the resistance state of variable resistors

Active Publication Date: 2019-03-08
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a resistive memory and a measurement system for measuring the resistive memory, which solves the problem in the prior art that the resistance state of the variable resistor cannot be controlled based on the current flowing through the variable resistor

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  • Resistive memory and measurement system for measuring the resistive memory
  • Resistive memory and measurement system for measuring the resistive memory
  • Resistive memory and measurement system for measuring the resistive memory

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Embodiment Construction

[0038] figure 1 It is a schematic diagram of the measurement system of the present invention. The measurement system 100 includes a test machine 110 and a resistive memory (RRAM) 120 . The test machine 110 is used to test whether the resistive memory 120 can access data normally. In this embodiment, the test machine 110 provides a character voltage V WL , a bit voltage V BL , a source voltage V SL , one line address ADS R and a list of addresses ADS C . In a possible embodiment, the row address ADS R and column address ADS C are parallel data.

[0039] The resistive memory 120 includes a row controller 121, a column controller 122, a source controller 123 and memory cells CL 11 ~CL mn . The row controller 121 is coupled to the word line WL 1 ~WL m , and according to the row address ADS R The word voltage V WL sent to the word line WL 1 ~WL m one of. In other embodiments, the row controller 121 may set the word voltage V WL Provided for more than 2 word line...

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Abstract

A resistive memory and a measurement system for measuring the resistive memory are provided. The measurement system comprises a testing machine and the resistive memory. The resistive memory comprises a first memory unit. The first memory unit comprises a transistor and a variable resistance. In a specific period, the testing machine provides a write-in voltage used for changing the resistance state of the variable resistance, and in a maintaining period, the write-in voltage is maintained, and current flowing through the variable resistance is measured. When the current flowing through the variable resistance fails to reach a preset value, the testing machine increases the write-in voltage. The resistive memory and the system can control the resistance state of the variable resistance through controlling voltage levels of a word line, a bit line and a source line, thus controlling data stored in the memory unit.

Description

technical field [0001] The present invention relates to a non-volatile memory, in particular to a resistive memory and a measuring system for measuring the resistive memory. Background technique [0002] Generally speaking, computer memory is divided into volatile memory and non-volatile memory. Nonvolatile memory includes read only memory (ROM), programmable read only memory (PROM), erasable programmable read only memory (EPROM), and flash memory. Volatile memory includes dynamic random access memory (DRAM) and static random access memory (SRAM). [0003] Currently, new types of non-volatile memory include ferroelectric memory, phase-change memory, magnetic memory (MRAM) and resistive memory (RRAM). Because the resistive memory has the advantages of simple structure, low cost and low power consumption, it is widely used. Contents of the invention [0004] The invention provides a resistive memory and a measurement system for measuring the resistive memory, which solves...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C13/00G11C29/56
Inventor 林立伟林家鸿蔡宗寰郑如杰曾逸贤
Owner WINBOND ELECTRONICS CORP