High-performance asymmetric metal oxide-based miniature super capacitor and preparation method thereof
A supercapacitor, oxide-based technology, applied in the manufacture of hybrid/electric double layer capacitors, hybrid capacitor electrodes, etc., can solve the problems of poor matching of positive and negative electrode materials, low coulombic efficiency of devices, low utilization of electrodes, etc. , to achieve the effect of enhancing pseudocapacitive capacity, improving Coulombic efficiency benefits, and increasing energy and power density
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Embodiment 1
[0027] A high-performance asymmetric metal oxide-based miniature supercapacitor, which includes the following steps:
[0028] 1) Coat photoresist 9000A on the silicon wafer substrate with a homogenizer at a speed of 4000rpm and a spin coating time of 40s, then use an electric hot plate to bake the glue at 100°C for 15min;
[0029] 2) Using photolithography technology to prepare interdigital structures with a width of 100 microns;
[0030] 3) Physical vapor deposition (PVD): use a thermal evaporation coating instrument to vaporize the metal electrode Cr / Ni (10nm / 100nm);
[0031] 4) After heating the acetone to 50°C and holding it for 15 minutes, put the device in it and let it stand for 1 hour to peel off all the interdigital fingers, then rinse the substrate with acetone and isopropanol, and dry it with nitrogen;
[0032] 5) Coat the positive and negative poles of the current collector with silver paste, taking care not to connect them, and let it stand for 6 hours in ventilation at roo...
Embodiment 2
[0039] A high-performance asymmetric metal oxide-based miniature supercapacitor, which includes the following steps:
[0040] 1) Coat photoresist 9000A on the silicon wafer substrate with a homogenizer at a speed of 4000rpm and a spin coating time of 40s, then use an electric hot plate to bake the glue at 100°C for 15min;
[0041] 2) Using photolithography technology to prepare interdigital structures with a width of 100 microns;
[0042] 3) Physical vapor deposition (PVD): use a thermal evaporation coating instrument to vaporize the metal electrode Cr / Ni (10nm / 100nm);
[0043] 4) After heating the acetone to 50°C and holding it for 15 minutes, put the device in it and let it stand for 1 hour to peel off all the interdigital fingers, then rinse the substrate with acetone and isopropanol, and dry it with nitrogen;
[0044] 5) Coat the positive and negative poles of the current collector with silver paste, taking care not to connect them, and let it stand for 6 hours in ventilation at roo...
Embodiment 3
[0051] A high-performance asymmetric metal oxide-based miniature supercapacitor, which includes the following steps:
[0052] 1) Coat photoresist 9000A on the silicon wafer substrate with a homogenizer at a speed of 4000rpm and a spin coating time of 40s, then use an electric hot plate to bake the glue at 100°C for 15min;
[0053] 2) Using photolithography technology to prepare interdigital structures with a width of 100 microns;
[0054] 3) Physical vapor deposition (PVD): use a thermal evaporation coating instrument to vaporize the metal electrode Cr / Ni (10nm / 100nm);
[0055] 4) After heating the acetone to 50°C and holding it for 15 minutes, put the device in it and let it stand for 1 hour to peel off all the interdigital fingers, then rinse the substrate with acetone and isopropanol, and dry it with nitrogen;
[0056] 5) Coat the positive and negative poles of the current collector with silver paste, taking care not to connect them, and let it stand for 6 hours in ventilation at roo...
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