Method for improving the brightness of LED chip
An LED chip and brightness technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of easy damage and pollution of the ITO transparent conductive layer, and achieve the effect of avoiding damage and pollution and improving quality
Active Publication Date: 2016-10-26
XIANGNENG HUALEI OPTOELECTRONICS
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[0004] The purpose of the present invention is to provide a method for improving the brightness of the LED chip, so as to solve the problem that the ITO transparent conductive layer is easily damaged and polluted in the existing chip manufacturing process, effectively improve the brightness of the LED chip, and reduce the chip voltage at the same time
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[0027] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, but the present invention can be implemented in various ways defined and covered by the claims.
[0028] The invention provides a method for improving the brightness of an LED chip, comprising the following steps:
[0029] Step A, successively forming an epitaxial layer including an N-type semiconductor layer 2, a light-emitting layer 23 and a P-type semiconductor layer 4, and an ITO transparent conductive layer 5 on the substrate 1; specifically, metal organic chemical vapor deposition, molecular beam epitaxy or The luminescent epitaxial layer is grown by the hydride vapor phase epitaxy technique, and the metal organic chemical vapor deposition technique is preferably used in the present invention to grow the epitaxial layer.
[0030] Step B, depositing a layer of TiO on the ITO transparent conductive layer 2 Passivation film 6; in the present invent...
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The present invention provides a method for improving the brightness of an LED chip, including the following steps: preparing an LED epitaxial layer, followed by successively evaporate-plating an ITO transparent conductive layer and depositing a TiO2 passivation film on the epitaxial layer; forming steps on an N type semiconductor layer and etching and removing the light emitting layer, a P type semiconductor layer, the ITO transparent conductive layer and the TiO2 passivation film on the lower steps; corroding and removing the TiO2 passivation film on the upper steps; finally, forming an SiO2 protection layer on the surface of the ITO transparent conductive layer and the LED on the lower steps; forming a groove P and a groove N respectively above the ITO transparent conductive layer by photolithography and etching and forming corresponding electrodes. According to the invention, an ITO transparent conductive layer can be protected in the processes of photolithography, etching and lithography for the TiO2 passivation film, which makes the ITO transparent conductive layer free from damage and pollution, improves the quality of the ITO transparent conductive layer and increases the brightness of an LED chip while decreasing the voltage.
Description
technical field [0001] The invention relates to the field of LED chip manufacturing, in particular to a method for improving the brightness of an LED chip. Background technique [0002] In the process of LED chip manufacturing, because the contact between P-GaN layer and P-type ohmic metal electrode will cause high contact resistance and low transmittance, the driving voltage of LED chip will increase, and the higher driving voltage will make LED During the use of the chip, a large amount of heat is generated, which not only causes energy loss, but also affects the reliability of the LED chip, thereby affecting the overall performance of the LED chip. In practical applications, due to its excellent photoelectric performance (high transmittance and low resistance) and good adhesion with GaN layer, ITO (Indium Tin Oxide) thin film is usually widely used. Used as an electrode material for GaN-based chips. [0003] Chinese patent application CN201310703714.4 discloses a method...
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Login to View More IPC IPC(8): H01L33/44H01L33/42
CPCH01L33/42H01L33/44
Inventor 胡弃疾张雪亮汪延明
Owner XIANGNENG HUALEI OPTOELECTRONICS