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A kind of preparation method of silicon carbide separation membrane

A silicon carbide and separation membrane technology, applied in the field of silicon carbide separation membrane and its preparation, can solve the problem of not considering the influence of high temperature thermal shock resistance and corrosion resistance of the silicon carbide separation membrane, and achieve convenient industrial production and easy operation. , the effect of simple process

Active Publication Date: 2018-08-17
JIANGSU JIULANG HIGH TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, none of the above invention patents considered the influence of the silicon dioxide produced by the oxidation of silicon carbide on the high-temperature thermal shock resistance and corrosion resistance of the silicon carbide separation membrane during the high-temperature preparation process.

Method used

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  • A kind of preparation method of silicon carbide separation membrane
  • A kind of preparation method of silicon carbide separation membrane
  • A kind of preparation method of silicon carbide separation membrane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The coating liquid is prepared by adding silicon carbide, mullite and zirconia micropowders prepared in proportion to the dispersion solution. The silicon carbide content in the powder is 80 wt%, the mullite content is 10 wt%, and the zirconia content is 10 wt%. The dispersion solution is 0.5wt% methylcellulose solution, and the liquid-solid content of the coating film is 20wt%. Mix evenly by stirring, the stirring time is 1 h, and the stirring speed is 200 r / min. Then the uniformly mixed coating solution was dispersed in an ultrasonic device with an ultrasonic power of 100 W and an ultrasonic time of 5 h. Finally, the coating solution obtained by ultrasonic dispersion is subjected to vacuum defoaming, and the defoaming agent is ethanol, and vacuumized until no bubbles emerge. The average particle size of the silicon carbide powder used is 1 μm, the average particle size of the mullite powder is 0.5 μm, and the average particle size of the zirconia powder is 0.5 μm. ...

Embodiment 2

[0037] The coating liquid is prepared by adding silicon carbide, mullite and zirconia micropowders prepared in proportion to the dispersion solution. The silicon carbide content in the micropowder is 85 wt%, the mullite content is 7.5 wt%, and the zirconia content is 7.5 wt%. The dispersion solution is 1.5wt% methylcellulose solution, and the liquid-solid content of the coating film is 20wt%. Mix evenly by stirring, the stirring time is 1 h, and the stirring speed is 200 r / min. Then the uniformly mixed coating solution was dispersed in an ultrasonic device with an ultrasonic power of 100 W and an ultrasonic time of 5 h. Finally, the coating solution obtained by ultrasonic dispersion is subjected to vacuum defoaming, and the defoaming agent is ethanol, and vacuumized until no bubbles emerge. The average particle size of the silicon carbide powder used is 10 μm, the average particle size of the mullite powder is 1 μm, and the average particle size of the zirconia powder is 1 μ...

Embodiment 3

[0041] The coating liquid is prepared by adding silicon carbide, mullite and zirconia micropowders prepared in proportion to the dispersion solution. The silicon carbide content in the micropowder is 98 wt%, the mullite content is 1 wt%, the zirconia content is 1 wt%, and the dispersion solution is 1.5 wt% methylcellulose solution. The liquid-solid content of the coating film was 35 wt%. Mix evenly by stirring, the stirring time is 5 h, and the stirring speed is 500 r / min. Then, the uniformly mixed coating liquid was dispersed in an ultrasonic device, the ultrasonic power was 200 W, and the ultrasonic time was 2.5 h. Finally, the coating solution obtained by ultrasonic dispersion is subjected to vacuum defoaming, and the defoaming agent is propanol, and vacuumized until no bubbles emerge. The average particle size of the silicon carbide powder used is 10 μm, the average particle size of the mullite powder is 1 μm, and the average particle size of the zirconia powder is 1 μm....

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Abstract

The invention relates to a high-performance silicon carbide separation membrane and a preparation method of the high-performance silicon carbide separation membrane. The silicon carbide separation membrane is prepared from, in percentage by mass, 80wt%-99wt% of silicon carbide, 0.5wt%-10wt% of zirconia and 0.5wt%-10wt% of mullite. The raw materials are added to 0.5wt%-3wt% of a dispersion solution; a supporting body is coated with a membrane coating solution with a spraying method, and the silicon carbide separation membrane is obtained after drying and high-temperature sintering. Oxidation of silicon carbide is controlled by controlling sintering atmospheres in different temperature sections, so that generated silicon dioxide can completely react with added zirconia and the like, and finally, the silicon carbide separation membrane with high thermal shock resistance and high corrosion resistance is prepared. The separation membrane has the advantages of high separation precision, high filtration flux and the like, can be used for industrial tail gas purification and waste water treatment, and has wide application prospect in clean production in fields such as cement, glass, metallurgy, energy and the like.

Description

technical field [0001] The invention belongs to the field of preparation of porous ceramic separation membranes, and relates to a silicon carbide separation membrane and a preparation method thereof. Background technique [0002] Silicon carbide ceramic materials have the advantages of high strength, high chemical stability, high temperature resistance, corrosion resistance, and excellent thermal shock resistance. and other fields have a wide range of applications. There is a strong Si-C covalency in silicon carbide. In the process of preparing pure silicon carbide separation membranes, the sintering temperature is generally higher than 2100 °C, and the oxidation of silicon carbide is prevented under the protection of high-purity argon. This results in high preparation costs, and the prepared silicon carbide separation membrane has a dense structure and low porosity. In order to realize the preparation of silicon carbide separation membrane at a lower temperature, the sint...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/565C04B35/622C04B41/87
CPCC04B35/565C04B35/62218C04B41/009C04B41/5059C04B41/87C04B2235/3244C04B2235/3463
Inventor 邢卫红仲兆祥魏巍韩峰张峰徐鹏
Owner JIANGSU JIULANG HIGH TECH CO LTD