Transparent interdigital electrode for photoelectrocatalysis and processing method thereof
A technology of interdigitated electrodes and photoelectric catalysis, which is applied in the field of interdigitated electrodes for transparent photocatalysis, and achieves the effects of convenient manufacture, stable electrical signal baseline, and high purity
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0034] This embodiment provides an interdigitated electrode for transparent photocatalysis, the interdigitated electrode from bottom to top is: substrate 1, buffer layer 2 and conductive layer 3; wherein, the material of the substrate 1 is transparent polymer polyimide amine composition; the conductive layer 3 is a metal layer formed of Pd.
[0035]The buffer layer is an alloy layer formed of Ti / W (mass ratio is 1:1); the thickness of the substrate is 0.1 mm, the thickness of the buffer layer is 25 μm; the thickness of the conductive layer is 20 μm.
[0036] The surface resistivity value of the interdigitated electrode for the transparent photoelectric catalysis circuit at 25°C is 1.80×10 -8 Ω·m.
Embodiment 2
[0038] This embodiment provides a kind of interdigitated electrode for transparent photocatalysis, and the interdigitated electrode is sequentially from bottom to top: substrate 1, buffer layer 2 and conductive layer 3; wherein, the material of the substrate 1 is sapphire; the conductive Layer 3 is a metal layer formed of Pt.
[0039] The buffer layer is an alloy layer formed by Mo / W (the mass ratio of Mo and W is 1:1); the thickness of the substrate is 0.48 mm, and the thickness of the buffer layer is 25 µm; the thickness of the conductive layer is is 20µm.
[0040] The surface resistivity value of the interdigitated electrode for transparent photocatalysis at 25°C is 1.92×10 -8 Ω·m.
Embodiment 3
[0042] This embodiment provides an interdigitated electrode for transparent photocatalysis, the interdigitated electrode from bottom to top is: a substrate 1, a buffer layer 2 and a conductive layer 3; wherein, the material of the substrate 1 is transparent glass; the The conductive layer 3 is a metal layer formed of Au.
[0043] The buffer layer is an alloy layer formed of Mo / W (the mass ratio of Mo and W is 1:1); the thickness of the substrate is 0.48 mm; the thickness of the buffer layer is 10 μm; the thickness of the conductive layer is 10 μm.
[0044] The surface resistivity value of the interdigitated electrode for transparent photocatalysis at 25°C is 1.92×10 -8 Ω·m.
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com