P-channel schottky gate silicon carbide electrostatic induction thyristor and manufacturing method thereof

Abstract

The invention discloses a P-channel schottky gate silicon carbide electrostatic induction thyristor and a manufacturing method thereof and aims at reducing the on-resistance of a device and improving the power characteristic. According to the technical scheme adopted by the structure, the P-channel schottky gate silicon carbide electrostatic induction thyristor comprises an N-type ohmic contact electrode, an N-type SiC substrate, a P-type SiC buffer layer, a P-type SiC drift layer and a P-type current enhancement layer which are sequentially arranged from bottom to top, wherein a plurality of steps are formed by etching the P-type current enhancement layer; grooves are arranged between the adjacent steps; the top part of each step is provided with a P-type SiC ohmic contact layer; the upper part of each P-type SiC ohmic contact layer is provided with a P-type ohmic contact electrode; the shape of each P-type ohmic contact electrode is the same as that of the corresponding P-type SiC ohmic contact layer; schottky electrodes are arranged in the grooves and are in contact with the side surfaces of the steps and the bottom parts of the grooves; each of the N-type ohmic contact electrode and the P-type ohmic contact electrode comprises an Ni layer and a Pt layer which are sequentially deposited; and each schottky electrode comprises an Ni layer, a Cr layer and an Au layer, or a Ti layer, the Cr layer and the Au layer, or a Pt layer, the Cr layer and the Au layer, which are sequentially deposited.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices and semiconductor technology, in particular to a P-channel Schottky gate silicon carbide electrostatic induction thyristor and a manufacturing method thereof. Background technique [0002] With the rapid development of science and technology, higher and higher requirements are put forward for the performance of power semiconductor devices. Currently used power devices are mainly made of traditional semiconductor materials such as silicon. Due to the limitation of material properties, it is difficult to continuously improve the electrical performance of devices; and devices made of these materials cannot be used in harsh environments such as high temperature and strong radiation. For long-term work, especially in the fields of new energy, automotive electronics, aerospace and other fields, traditional silicon power devices have gradually become incompetent. [0003] Among many new se...

AI Technical Summary

Problems solved by technology

[0007] Although the first solution does not increase the difficulty of the process, it needs to change the gate from voltage drive to current drive, which will not only increase the drive power and increase the complexity of the drive circuit; at the same time, because the gate injection can only modulate the low-doped region of the channel conductivity, so the application value of this scheme is limited

Images