Capacitor mechanism-based one-time programmable device and programming realization method

A one-time, capacitive technology, applied in the field of integrated circuit manufacturing, can solve the problems of increasing power consumption and complex circuit structure, and achieve the effect of reducing power consumption, reducing programming voltage, and being easy to implement.

Inactive Publication Date: 2016-11-16
CETHIK GRP
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The breakdown voltage of the barrier layer is higher than the ordinary programming voltage, and due to the on-resistance of the switch tube, the external voltage must be high enough to ensure the effective breakdown of the barrier layer of the MTJ. This traditional method often requires additional The high-voltage input structure not only complicates the design of the circuit structure, but also increases the power consumption of a programming

Method used

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  • Capacitor mechanism-based one-time programmable device and programming realization method
  • Capacitor mechanism-based one-time programmable device and programming realization method
  • Capacitor mechanism-based one-time programmable device and programming realization method

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Embodiment

[0021] Example: such as figure 1 As shown, a one-time programmable device based on a capacitor mechanism is composed of a MOS switch tube, a magnetic tunnel junction, a capacitor, a word line, a bit line, a sense amplifier circuit, and a potential generating device. The magnetic tunnel junction includes a free layer, a barrier layer, and a reference layer; the barrier layer is sandwiched between the free layer and the reference layer, such as figure 2 shown. figure 1 Point A in the figure is the drain of the MOS switch; the free layer of the magnetic tunnel junction is connected to the drain of the MOS switch; the reference layer of the magnetic tunnel junction is connected to the bit line. The gate of the MOS switch tube is connected to the word line; the source of the MOS switch tube is connected to the potential generating device. The potential generated by the potential generating device is a fixed ground potential. One end of the capacitor is connected to the word lin...

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Abstract

The invention relates to a capacitor mechanism-based one-time programmable device and a programming realization method. The capacitance mechanism-based one-time programmable device comprises a switch MOS tube, an MTJ (magnetic tunnel junction) and a capacitor. Through the capacitor which is rechargeable, when the voltage is relatively low, a manner of charging the capacitor to generate a voltage higher than a normal programming voltage of the MTJ is used to carry out one-time writing on an OTP device, and a barrier layer in the MTJ is punched through, so that the effect of one-time programming is achieved. According to the method, a manner of supercharging through internal capacitor charging is utilized to reduce the externally required programming voltage, so that compared with the traditional OTP structure, the capacitor mechanism-based one-time programmable device is small in floor space, easy to realize and simple to operate, and can be used for reducing the power consumption of one-time programming and saving the manufacturing cost.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a one-time programmable device based on a capacitance mechanism and a programming realization method. Background technique [0002] OTP (one time programmable, one-time programmable device) is a common NVM (non-volatile memory). One-time programming is irreversible during the programming process and only allows writing once. STT-MRAM is a kind of non-volatile memory. Its storage structure adopts MTJ magnetic tunnel junction, the middle one is called barrier layer, and the upper and lower ones are free layer and reference layer. [0003] One-time programming for MTJ (Magnetic Tunnel Junction) usually uses high voltage to break down the barrier layer, and the barrier layer after breakdown shows low impedance (about 100 ohms). The breakdown voltage of the barrier layer is higher than the ordinary programming voltage, and due to the on-resistance of the switch tube, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16G11C17/14G11C17/18
CPCG11C11/1659G11C11/1673G11C17/146G11C17/18
Inventor 陆羽毛欣
Owner CETHIK GRP
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