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Float zone silicon wafer manufacturing system

A floating area silicon and silicon wafer technology, applied in the field of wafer manufacturing, can solve problems such as cost constraints

Inactive Publication Date: 2016-11-16
RAYTON SOLAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the problem with using FZ silicon is that it has to be cut thicker than the desired wafer size (e.g. on the order of 300-500 microns in thickness) because the hard material properties prevent known methods (e.g. diamond wire) from cutting the material cut thinner
Therefore, silicon wafers made of FZ silicon etc. are currently cost-constraining due to material costs and limitations regarding the minimum fabrication thickness of wafers currently available

Method used

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  • Float zone silicon wafer manufacturing system
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Embodiment Construction

[0045] As shown in the accompanying drawings for illustrative purposes, generally referred to figure 1 The flowchart of the present invention shows the improved method of manufacturing wafers, and the operation of the manufacturing method is shown in more detail in FIGS. 2-10. More specifically, such as figure 1 As shown, the first step is to create an ingot 100 . In a preferred embodiment, the ingot 100 is a single crystal cylindrical silicon ingot. Although ingot 100 may be of any material suitable for exfoliation, including polysilicon, and may have any cross-sectional shape, such as a polygonal cross-sectional shape. A set of methods and apparatus disclosed herein aims to reduce the waste associated with the processing of cylindrical ingots (which are used as workpieces to produce square or rectangular silicon wafers for solar panels, etc.) into squares. Furthermore, in order to eliminate the use of the aforementioned diamond-coated wires to slice individual wafers, the...

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Abstract

The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.

Description

Background of the invention [0001] The present invention generally relates to methods and apparatus for fabricating wafers. More specifically, the present invention relates to methods and apparatus for exfoliating ingots to more efficiently produce solar grade photovoltaic wafers and the like therefrom. [0002] Conventionally, wafer material such as monocrystalline silicon is processed into solar-grade photovoltaic ("PV") wafers by first producing a single crystalline cylindrical ingot of silicon. The ingot is produced by melting high-purity semiconductor-grade wafer material in an inert chamber, such as one made of quartz. Dopant impurity atoms such as boron, phosphorus, arsenic or antimony can be added to the molten wafer material in precise amounts (e.g. 10 13 or 10 16 atom / cm 3 of the order of ) to define the material as a bulk n-type (negative) or p-type (positive) semiconductor that imparts the desired electrical properties to the wafer material. The rod-assembled ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/04C30B31/22
CPCC30B33/06C30B13/00C30B29/06C30B29/64C30B33/04
Inventor A·X·雅库博J·B·罗森茨威格M·S·格尔斯基
Owner RAYTON SOLAR