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Methods of Aluminum Etching

An aluminum etching and etching technology, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve problems such as short circuit, circuit etching residue, affecting product yield, etc., to reduce production, reduce content, and solve circuit etching. Effects of Residues and Short Circuits

Active Publication Date: 2019-01-01
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0006] Usually, after the dry etching process is performed on aluminum, there will be a problem that particles adhere to the inner wall of the etching chamber to form a particle source. When these particles fall on the film layer to be etched in the subsequent etching process , it is likely to cause the problem of line etching residue and short circuit, which will affect the product yield

Method used

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  • Methods of Aluminum Etching
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  • Methods of Aluminum Etching

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Embodiment Construction

[0039] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0040] see figure 1 , the invention provides a method for aluminum etching, comprising:

[0041] Step 1. Provide an aluminum film substrate, the aluminum film substrate includes a base substrate and an aluminum film arranged on the base substrate, coat a photoresist layer on the aluminum film, and use a photomask to cover the photoresist layer After exposure and development, a pattern of the photoresist layer is formed.

[0042] Step 2, provide a dry etching equipment, the dry etching equipment has an etching chamber, put the aluminum film substrate with a photoresist layer pattern into the etching chamber, pass chlorine-containing gas into the etching chamber, The aluminum film substrate is etched, and the chlorine-containing gas etches the...

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Abstract

The invention provides methods for aluminum etching. By adjusting temperature and pressure conditions in an etching cavity in the dry etching process, aluminum chloride is kept in a gas state, generation of aluminum chloride particles is reduced, the residual quantity of the aluminum chloride in the etching cavity after gas extraction is small, and therefore the content of aluminum-containing compounds in the etching cavity is lowered, and generation of aluminum-containing particles is reduced; or, a gas flushing step is added before the fluorine-chlorine replacement process after the dry etching process, so that the content of aluminum-containing compounds in the etching cavity is lowered, and generation of aluminum-containing particles is reduced; or, an etching cavity cleaning step is added before the dry etching process, so that the content of aluminum-containing compounds in the etching cavity is lowered, and generation of aluminum-containing particles is reduced. By means of the three methods, the content of aluminum-containing particles in the etching cavity can be reduced, the probability that particles fall onto a film to be etched in the dry etching process is reduced, the problems of circuit etching residues and short circuit are solved, and the product yield is increased.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an aluminum etching method. Background technique [0002] With the development of display technology, liquid crystal displays (Liquid Crystal Display, LCD) and other flat display devices are widely used in mobile phones, televisions, personal Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become the mainstream of display devices. [0003] Most of the liquid crystal display devices currently on the market are backlight liquid crystal displays, which include a liquid crystal display panel and a backlight module. The working principle of the liquid crystal display panel is to place liquid crystal molecules between two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates. The direction of the liquid crystal molecules is controlled by electrifyi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/12C23F1/02H01L21/3213
CPCC23F1/02C23F1/12H01L21/32136H01L21/32138H01L21/32139
Inventor 余洪涛
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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