A method of manufacturing a high-precision pressure sensor based on silicon-silicon bonding

Abstract

The invention discloses a manufacturing method of a high-precision pressure sensor based on silicon-silicon bonding. The high-precision pressure sensor comprises a sensitive silicon wafer layer and a substrate silicon wafer layer and is characterized in that the substrate silicon wafer layer is connected to the back of the sensitive silicon wafer layer, and the sensitive silicon wafer layer and the substrate silicon wafer layer use silicon-silicon bonding process to form a pressure sealing cavity; the substrate silicon wafer layer and the sensitive silicon wafer layer are made of homogenous monocrystalline silicon materials, and the substrate silicon wafer layer is provided with a pressure guide through hole in the center. The manufacturing method has the advantages that the substrate silicon wafer layer and the sensitive silicon wafer layer are made by using the monocrystalline silicon materials as the substrates, the substrate silicon wafer layer and the sensitive silicon wafer layer are connected in an airtight manner through the silicon-silicon bonding process, the pressure sealing cavity of a silicon-silicon homogenous material structure is formed, various influences, caused by the pressure sealing cavity of the silicon-glass heterogeneous material structure of a conventional pressure sensor, on the performance of the sensor due to the feature difference of two different materials are avoided, static pressure errors are reduced effectively, temperature excursion of the sensor is lowered, and the comprehensive precision of the sensor is increased.

Description

technical field

[0001] The invention belongs to the technical field of silicon micromechanical sensors, in particular to a method for manufacturing a high-precision pressure sensor based on silicon-silicon bonding using single-crystal silicon materials. Background technique

[0002] As a typical representative of the great success of micromachining technology, piezoresistive pressure sensors are widely used in many fields such as industrial control, environmental monitoring and measurement, automotive systems, aerospace, military, and biomedicine. The sensitive chip of the piezoresistive pressure sensor is made of single crystal silicon material, which is made by the fusion technology of microelectronics and micromachining. It has the characteristics of good linearity and easy signal measurement. However, due to the temperature characteristics of the piezoresistive sensor piezoresistor itself and the characteristics of the packaging structure, it is not only sensitive to the...

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