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Disilane manufacturing method

A manufacturing method and technology of disilane, applied in chemical instruments and methods, silicon hydride, molecular sieve catalysts, etc., can solve problems such as preparation, and achieve the effects of reducing production cost, improving production efficiency, and low energy consumption

Active Publication Date: 2016-12-07
TSCG ZHEJIANG SEMICON MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, products such as silane and silane cannot be prepared by this method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Disilane is produced according to the above method. Wherein, the reaction temperature is -10°C, the reaction pressure is 0.2 MPa, the molar ratio of the magnesium silicide and the ammonia chloride is 1:2, and the catalyst is C 54 H 52 P 4 ZnCl 2 , The reaction is in 3M 3 In the reactor. The purification device is two stainless steel vessels with a diameter of 10 cm and a height of 1 m connected in series. A copper-based catalyst is arranged in the purification device. The copper-based catalyst is a supported catalyst, and the carrier of the catalyst is a titanium silicate molecular sieve with a pore size of 0.2 nm.

Embodiment 2

[0022] Example 1 was repeated, except that the reaction temperature was 50° C., the reaction pressure was 1 MPa, the molar ratio of magnesium silicide to ammonia chloride was 1:5, and the catalyst was C 54 H 45 P 3 ZnX 2 , The reaction is at 10M 3 It is carried out in a reaction kettle equipped with a magnetic stirrer. The purification device is two stainless steel vessels with a diameter of 40 cm and a height of 3 m connected in series. A cuprous chloride catalyst is arranged in the purification device. The support for the cuprous chloride is a silica molecular sieve with a pore size of 50 nm.

Embodiment 3

[0024] Example 1 was repeated, except that the reaction temperature was 20° C., the reaction pressure was 0.6 MPa, the molar ratio of magnesium silicide to ammonia chloride was 1:3.5, and the catalyst was C 52 H 48 P 4 ZnCl 2 , The reaction is at 6.5M 3 It is carried out in a reaction kettle equipped with a magnetic stirrer. The purification device is 4 series-connected stainless steel vessels with a diameter of 20 cm and a height of 2 m. A catalyst of copper and cuprous chloride is arranged in the purification device. The molar ratio of copper and cuprous chloride is 3:1, and the catalyst support is a silica molecular sieve with a pore size of 1 nm.

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Abstract

The invention discloses a disilane manufacturing method, characterized in that magnesium silicide and ammonium chloride are reacted at raw materials to generate disilane gas in the presence of liquid ammonia and a catalyst, wherein reaction temperature is -10 DEG C to -50 DEG C, reaction pressure is 0.2-1 MPa, a molar ratio of the magnesium silicide to the ammonium chloride is 1:(2-5), and the catalyst is a zinc complex; purifying a reaction product with a purifying device, wherein a copper catalyst is arranged in the purifying device.

Description

Technical field [0001] The invention belongs to the field of gas production technology, and specifically relates to the production of monosilane (SiH 4 ), disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ) And other methods, especially suitable for the production method of disilane. Background technique [0002] In the manufacturing process of microelectronics, silicon is used to isolate the conductive layers in electronic precision components. As components, such as chips, are constantly pursuing precision, and their specifications are getting finer and smaller, from micron to nanometers, the silicon isolation layer can no longer be formed by mechanical cutting, but must be formed by vapor-phase lamination. So silanes The use of the necessary materials. [0003] Disilane is a promising silicon film precursor. Compared with monosilane, it has the advantages of fast deposition speed, low temperature requirement, and high film uniformity. It is one of the attractive special gases in the ...

Claims

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Application Information

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IPC IPC(8): C01B33/04B01J29/035B01J29/89
CPCB01J29/0356B01J29/89C01B33/04
Inventor 黄晓东
Owner TSCG ZHEJIANG SEMICON MATERIAL CO LTD