A Write Circuit Structure of Spin Torque Transfer Magnetic Random Access Memory
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A technology of spin torque transfer and random access memory, which is applied in static memory, digital memory information, information storage, etc., and can solve the problem of repeated writing of data bits
Active Publication Date: 2019-12-03
CETHIK GRP +1
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[0004] The purpose of the present invention is to provide a write circuit structure of spin torque transfer magnetic random access memory, to solve the problem of repeated writing of most of the data bits in the prior art in practical application, and to shield the repeated writing through logic switch control Write operation, so as to achieve the purpose of reducing MRAM write power consumption and chip dynamic power consumption
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Embodiment approach 1
[0030] Embodiment 1, such as Figure 5 As shown, the control unit includes a NOR gate and an AND gate.
[0031] Such as image 3 , Figure 5 As shown, the control unit of this embodiment includes a NOR gate and an AND gate, the two inputs of the NOR gate are respectively connected to the bit line and point A, one input terminal of the AND gate is connected to the output of the NOR gate, and the other The input end is connected to the word line, and the output of the AND gate is connected to point B, which is the output of the control unit.
[0032] Under the control of the word line, when the control signal of the write operation is input on the word line, the control unit first judges whether the content stored in the memory unit (that is, the potential of the capacitor C1) is equal to the bit line, and if they are equal, the potential of point B is "" 1", turn on MOS1 and MOS2, allowing data to be written and updated; if the stored content is different from the data writt...
Embodiment approach 2
[0039] Embodiment 2, such as Image 6 As shown, the control unit includes an XOR gate and an AND gate.
[0040] Such as Figure 4 , Image 6 As shown, the control unit of this embodiment includes an XOR gate and an AND gate, the two inputs of the XOR gate are respectively connected to the source line and point A, one input terminal of the AND gate is connected to the output of the XOR gate, and the other The input end is connected to the word line, and the output of the AND gate is connected to point B, which is the output of the control unit.
[0041] Under the control of the word line, when the control signal of the write operation is input on the word line, the control unit first judges whether the content stored in the memory cell is equal to the data to be written (source line), if they are equal, the potential of point B is " 0", MOS1 and MOS2 are not turned on, and this write operation is shielded; if the stored content is different from the data to be written, the p...
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Abstract
The invention discloses a write circuit structure of a spin-torque transfer magnetic random access memory. The write circuit structure comprises a magnetic tunnel junction, and a source line, a bit line and a word line, a first switch tube, a second switch tube, a control unit and a capacitor, wherein a free layer of the magnetic tunnel junction is connected with a drain electrode of the first switch tube, a reference layer of the magnetic tunnel junction is connected with a source electrode of the second switch tube; the source electrode of the first switch tube is connected with the source line, and the drain electrode of the second electrode is connected with the bit line; one end of the capacitor is grounded, and the other end is connected to the input end of the control unit and is connected with the drain electrode of the first switch tube or the free layer of the magnetic tunnel junction; the input end of the control unit is respectively connected with the wore line, the source line or the bit line, and the drain electrode of the first switch tube or the free layer of the magnetic tunnel junction; the output end of the control unit is connected with the grid electrodes of the first switch tube and the second switch tube. Through the adoption of the write circuit structure disclosed by the invention, the repeated write action can be avoided, the aim of lowering the MRAM write power consumption and the chip dynamic power consumption is achieved.
Description
technical field [0001] The invention relates to the technical field of nonvolatile memory, in particular to a write circuit structure of a spin torque transfer magnetic random access memory. Background technique [0002] The spin torque transfer magnetic random access memory (STT-MRAM) is a kind of non-volatile memory, and its storage structure adopts MTJ magnetic tunnel junction, such as figure 1 As shown, the middle layer is called the barrier layer, and the upper and lower layers are the free layer and the reference layer respectively. When writing data "0", the current flows from the reference layer through the free layer to make the MTJ (magnetic tunnel junction) flip to an antiparallel state; when writing data "1", the current flows from the free layer through the reference layer to make the MTJ (magnetic tunnel junction) knot) flips to the parallel state. To flip the magnetic tunnel junction, a certain voltage must be maintained at both ends of the magnetic tunnel j...
Claims
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