A Write Circuit Structure of Spin Torque Transfer Magnetic Random Access Memory

Abstract

The invention discloses a write circuit structure of a spin-torque transfer magnetic random access memory. The write circuit structure comprises a magnetic tunnel junction, and a source line, a bit line and a word line, a first switch tube, a second switch tube, a control unit and a capacitor, wherein a free layer of the magnetic tunnel junction is connected with a drain electrode of the first switch tube, a reference layer of the magnetic tunnel junction is connected with a source electrode of the second switch tube; the source electrode of the first switch tube is connected with the source line, and the drain electrode of the second electrode is connected with the bit line; one end of the capacitor is grounded, and the other end is connected to the input end of the control unit and is connected with the drain electrode of the first switch tube or the free layer of the magnetic tunnel junction; the input end of the control unit is respectively connected with the wore line, the source line or the bit line, and the drain electrode of the first switch tube or the free layer of the magnetic tunnel junction; the output end of the control unit is connected with the grid electrodes of the first switch tube and the second switch tube. Through the adoption of the write circuit structure disclosed by the invention, the repeated write action can be avoided, the aim of lowering the MRAM write power consumption and the chip dynamic power consumption is achieved.

Description

technical field [0001] The invention relates to the technical field of nonvolatile memory, in particular to a write circuit structure of a spin torque transfer magnetic random access memory. Background technique [0002] The spin torque transfer magnetic random access memory (STT-MRAM) is a kind of non-volatile memory, and its storage structure adopts MTJ magnetic tunnel junction, such as figure 1 As shown, the middle layer is called the barrier layer, and the upper and lower layers are the free layer and the reference layer respectively. When writing data "0", the current flows from the reference layer through the free layer to make the MTJ (magnetic tunnel junction) flip to an antiparallel state; when writing data "1", the current flows from the free layer through the reference layer to make the MTJ (magnetic tunnel junction) knot) flips to the parallel state. To flip the magnetic tunnel junction, a certain voltage must be maintained at both ends of the magnetic tunnel j...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a write circuit structure of spin torque transfer magnetic random access memory, to solve the problem of repeated writing of most of the data bits in the prior art in practical application, and to shield the repeated writing through logic switch control Write operation, so as to achieve the purpose of reducing MRAM write power consumption and chip dynamic power consumption

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