A magnetic tunnel junction with strong perpendicular magnetic anisotropy

A magnetic tunnel junction, anisotropic technology, applied in the fields of non-volatile magnetic memory and magnetic logic, can solve the problems of large magnetic damping coefficient, low spin transfer torque reversal efficiency, and increased film complexity.
CN107946456BActive Publication Date: 2020-07-07BEIHANG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
BEIHANG UNIV
Publication Date
2020-07-07

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Abstract

The present invention is a magnetic tunnel junction with strong perpendicular magnetic anisotropy, its structure is ferromagnetic layer 1, potential barrier layer, and ferromagnetic layer 2 from bottom to top; it is characterized in that: the cross-sectional size of the magnetic tunnel junction is in Between 1nm and 150nm, the thickness of ferromagnetic layer 1 and ferromagnetic layer 2 is greater than 6nm, and the thickness of ferromagnetic layer 1 and ferromagnetic layer 2 is greater than half of the cross-sectional size; the thickness of the barrier layer is 0.2‑10nm . Compared with the existing technology, the device has the advantages of strong perpendicular magnetic anisotropy, high thermal stability, small cross-sectional size, high spin-transfer torque reversal efficiency, and fewer film layers.
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Description

【Technical field】

[0001] The invention relates to a magnetic tunnel junction with strong perpendicular magnetic anisotropy, which belongs to the technical field of nonvolatile magnetic memory and magnetic logic. 【Background technique】

[0002] Magnetic random access memory (MRAM) and magnetic logic have the advantages of non-volatility, fast read and write speed, low power consumption, unlimited erasing and writing, etc., and have attracted extensive attention from industry and academia.

[0003] The core device of magnetic random access memory and magnetic logic is the magnetic tunnel junction (Magnetic Tunnel Junction, MTJ). The basic structure of the magnetic tunnel junction consists of three thin films: ferromagnetic layer, barrier layer, and ferromagnetic layer. When the magnetization directions of the two ferromagnetic layers are the same, the resistance of the structure is low; when the magnetization directions of the two ferromagnetic layers are opposite, the resist...

Claims

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