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A manufacturing process for extended series of high-energy and wide-temperature tantalum capacitors

A tantalum capacitor and manufacturing process technology, which is applied in the field of extended series manufacturing process of high-energy and wide-temperature tantalum capacitors, can solve problems such as high production costs, economic losses, and circuit failures, so as to improve reliability, reduce leakage current values, and have a good market prospect Effect

Active Publication Date: 2019-03-05
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the maximum operating temperature of existing tantalum capacitors is basically 125°C, and it is easy to fail when working at a higher temperature, which will lead to circuit failure and may also cause huge economic losses. Therefore, a high energy density, high reliability It is imperative to develop and manufacture tantalum capacitors with high working temperature
[0004] The application number is 201410197768.2 patent "a high-energy and wide-temperature tantalum capacitor preparation method". The formation process adopts hierarchical formation. The process is relatively complicated and time-consuming, resulting in high production costs.

Method used

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  • A manufacturing process for extended series of high-energy and wide-temperature tantalum capacitors
  • A manufacturing process for extended series of high-energy and wide-temperature tantalum capacitors
  • A manufacturing process for extended series of high-energy and wide-temperature tantalum capacitors

Examples

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Effect test

Embodiment 1

[0033] A high-energy wide-temperature capacitor manufacturing process, comprising the following steps:

[0034] (1) Adjust the pressing density D of the tantalum block: adjust the pressing density D of the tantalum block: D=0.5D0, D0 is the nominal pressing density;

[0035] (2) Heat treatment: application temperature: 300°C, time: 15min;

[0036] (3) Preparation of secondary forming liquid: specific formula: the volume ratio of ethylene glycol, phosphoric acid, and waterproof mixture is 70:1:8, and the waterproof mixture is prepared by mixing polypropylene glycol and resin according to the volume ratio of 10:7;

[0037] (4) Secondary formation at high temperature: the steps are:

[0038] ① Soak in forming solution for 1 hour at room temperature,

[0039] ②At a temperature of 150°C, start to boost the voltage at a rate of 3V / min,

[0040] ③Constant voltage for 2 hours after the boost reaches 1.2 times the rated voltage.

[0041] (5) Graded high-temperature aging: including...

Embodiment 2

[0049] A high-energy wide-temperature tantalum capacitor extended series manufacturing process, which includes the following steps:

[0050] (1) Adjust the pressing density D of the tantalum block: adjust the pressing density D of the tantalum block: D=0.68D0, D0 is the nominal pressing density;

[0051] (2) Heat treatment: application temperature: 340°C, time: 70min;

[0052] (3) Preparation of secondary forming liquid: specific formula: the volume ratio of ethylene glycol, phosphoric acid, and waterproof mixture is 75:2:9, and the waterproof mixture is prepared by mixing polypropylene glycol and resin according to the volume ratio of 15:12;

[0053] (4) Secondary formation at high temperature: the steps are:

[0054] ① Soak in forming solution for 1 hour at room temperature,

[0055] ②At a temperature of 155°C, start boosting at a rate of 3V / min,

[0056] ③Constant voltage for 2 hours after the boost reaches 1.2 times the rated voltage.

[0057] (5) Graded high-temperatu...

Embodiment 3

[0065] A high-energy wide-temperature tantalum capacitor extended series manufacturing process, which includes the following steps:

[0066] (1) Adjust the pressing density D of the tantalum block: adjust the pressing density D of the tantalum block: D=0.75D0, D0 is the nominal pressing density;

[0067] (2) Heat treatment: application temperature: 380°C, time: 120min;

[0068] (3) Preparation of secondary forming liquid: specific formula: the volume ratio of ethylene glycol, phosphoric acid, and waterproof mixture is 80:3:10, and the waterproof mixture is prepared by mixing polypropylene glycol and resin according to the volume ratio of 13:9;

[0069] (4) Secondary formation at high temperature: the steps are:

[0070] ① Soak in forming solution for 1 hour at room temperature,

[0071] ②At a temperature of 152°C, start boosting at a rate of 3V / min,

[0072] ③Constant voltage for 2 hours after the boost reaches 1.2 times the rated voltage.

[0073] (5) Graded high-temperat...

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Abstract

The invention discloses a manufacturing process for expanded high-energy wide-temperature-range tantalum capacitor series. The manufacturing process comprises the following steps of (1) adjusting the compaction density of a positive electrode tantalum core; (2) performing heat treatment on the formed positive electrode tantalum core; (3) preparing a secondary forming solution; (4) performing high-temperature secondary formation; and (5) performing high-temperature aging in different stages. According to the manufacturing process, the wettability of the prepared secondary forming solution can be improved during formation of the positive electrode tantalum core; after the formed positive electrode tantalum core is subjected to the heat treatment, the positive electrode tantalum core is subjected to the high-temperature secondary formation; the forming solution adopted in the high-temperature secondary formation can ensure that a second layer of high-temperature-resistant dielectric oxide film is uniformly grown on the surface of an oxide film, so that the high-temperature rectification characteristic of the product can be improved, and defects on the surface of the first layer of the oxide film can be covered and repaired; the specification extension of the high-energy wide-temperature-range tantalum capacitor series can be realized; and it is ensured that the expanded tantalum capacitors can stably work within a wide temperature range of minus 55 to 200 DEG C for a long time, thereby expanding the application range of the tantalum capacitor series.

Description

technical field [0001] The invention relates to a high-energy and wide-temperature tantalum capacitor expansion series manufacturing process, which belongs to the technical field of tantalum electrolytic capacitor preparation. Background technique [0002] With the increasing depletion of land oil resources, countries all over the world have turned their targets to the ocean, which is richer in resources. In view of the continuous improvement of the degree of liberalization of special oil exploration operations, the environmental adaptability requirements for electronic components used in DC or pulsating circuits of high-temperature-resistant electronic equipment such as oil deep well measurement and drilling are also getting higher and higher. Drilling in areas of higher (global geothermal gradient typically 25°C / km depth), these harsh subterranean wells have temperatures in excess of 250°C and pressures in excess of 25kpsi. In addition, other applications such as avionics...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/00H01G9/15
CPCH01G9/0032H01G9/15
Inventor 鄢波阳元江潘齐凤石洪富吴疆蒙林斌潘平华
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD