Preparation method for metal silicide formed on gate electrode of semiconductor device

Abstract

The invention provides a preparation method for a metal silicide formed on a gate electrode of a semiconductor device. The method comprises the steps of forming a gate oxide layer and a low-resistivity polysilicon layer on the surface of a semiconductor silicon substrate in sequence; then depositing silicon nitride on the surface of the low-resistivity polysilicon layer to form a silicon nitride layer; performing photoetching and etching to form the gate electrode, and then forming a body region, a source region and a drain region; forming an oxide layer on the surface of the overall device; removing the oxide layer from the surface of the silicon nitride layer, and removing the silicon nitride layer; and covering the surface of the overall device with a metal layer, performing a reaction on the metal layer on the surface of the low-resistivity polysilicon layer to form the metal silicide, and removing the unreacted metal layer. By adoption of the preparation method, the problem of electric leakage of the semiconductor device is prevented, thereby improving the reliability of the semiconductor device.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a preparation method for forming a metal silicide on a gate of a semiconductor device. Background technique [0002] Semiconductor devices are commonly used devices in industrial manufacturing, and metal silicide needs to be formed on the gate of the semiconductor device to reduce the resistance of the gate. [0003] The preparation method for forming a metal silicide on the gate of a semiconductor device provided in the prior art is: depositing silicon nitride on a polysilicon layer on a semiconductor silicon substrate to form a silicon nitride layer; Implant N-type ions into the polysilicon layer in the direction to make the polysilicon layer a low-resistance polysilicon layer; then perform photolithography, etching, and thermal oxidation treatments on the silicon substrate to form an oxide layer on the surface of the silicon substrate; then use acidic The solution remo...

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Problems solved by technology

[0005] The invention provides a preparation method for forming a metal silicide on the gate of a semiconductor device, which is used to solve the problem of semiconductor device leakage caused by the existing preparation method, thereby damaging the semiconductor device and reducing the reliability of the semiconductor device

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