The invention discloses a flip-chip LED chip and a manufacturing method thereof, belonging to the field of semiconductor technology. The flip-chip LED chip comprises a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a transparent conductive film, a reflective layer, a P-type electrode, an N-type electrode, a passivation layer, a P-type pad, an N-type pad and an anti-pin layer; The P-type pad is arranged on the passivation layer around the P-type electrode and the region where the P-type electrode is located, and the N-type pad is arranged on the passivation layer around the N-type electrode and the region where the N-type electrode is located. The anti-thimble layer is arranged on the passivation layer between the P-type pad and the N-type pad; Theanti-thimble layer is formed of a metal material, and the anti-thimble layer is spaced between the P-type pad and the N-type pad. As that metal material is adopt to form the anti-thimble layer, the metal material has good ductility, the anti-thimble lay can effectively release the acting force of the metal thimble, the chip process layer is for with good protection, and the metal thimble can effectively prevent the chip process layer from being damaged by the metal thimble.