Preparation method of GaN-based light-emitting diode chip

Abstract

The invention discloses a preparation method of a GaN-based light-emitting diode chip. The method comprises the following steps: (1) etching a table board structure from a p-type GaN layer to an n-type GaN layer of a GaN-based epitaxial wafer, preparing a table board on the n-type GaN layer, and simultaneously removing a residual photoresist on the surface; (2) growing current blocking layers on the outer surfaces of the p-type GaN layer and the n-type GaN layer; (3) etching the required patterns on the current blocking layers, reserving the current blocking layer on the upper surface of the p-type GaN layer and the current blocking layer on the side wall of a P/N junction; (4) depositing an nano-indium tin oxide (ITO) transparent conductive film on the surface of the p-type GaN layer; (5) respectively preparing a p-type electrode and an n-type electrode on the ITO transparent conductive film and the table board of the n-type GaN layer; and (6) preparing a passivation layer and exposing a metal electrode through photoetching. According to the method, the current blocking layers on the upper surface of the p-type GaN layer and the side wall of the P/N junction are reserved; the subsequent ITO transparent conductive film is prevented from contacting the metal electrode; the residual ITO or metal on the P/N junction is avoided; and electric leakage is not caused.

Description

technical field [0001] The invention relates to a method for preparing a GaN-based light-emitting diode chip, which belongs to the field of optoelectronic technology. Background technique [0002] Using sapphire (Sapphire, chemical formula Al 2 o 3 ) as the substrate, growing GaN semiconductors through organic chemical vapor deposition equipment has become the mainstream structure of blue LED components. [0003] Since the sapphire substrate is non-conductive, in the preparation of GaN-based LED chips, it is necessary to remove part of the material from the surface of the LED epitaxial wafer to the heavily doped n-type GaN layer, and place them on the p-type and n-type GaN materials respectively. Prepare p-type and n-type electrodes. [0004] The chemical bonding energy of GaN is high, and the high bonding energy and wide bandgap make the group III nitride materials chemically inert in nature, and are not corroded by chemical acid and alkali solutions at room temperature,...

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