Silicon carbide metal oxide semiconductor field effect transistor and manufacturing method thereof

Abstract

The invention provides a silicon carbide metal oxide semiconductor field effect transistor and a manufacturing method thereof. A temperature sensor P+ ion implantation region and a temperature sensor N+ ion implantation region are formed in a third P well region through ion implantation; and the temperature sensor P+ ion implantation region and the temperature sensor N+ ion implantation region form a PN junction diode. Real-time detection of an internal temperature of a silicon carbide device is achieved through integrating a PN junction temperature sensor in a P well of a silicon carbide VDMOS; the silicon carbide metal oxide semiconductor field effect transistor can be applied to temperature detection at a high temperature; the influence of the sensor on reverse withstand voltage of the silicon carbide VDMOS is eliminated; the layout overhead is minimized; and the silicon carbide metal oxide semiconductor field effect transistor has good compatibility with an existing VDMOS manufacturing technology.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a silicon carbide metal oxide semiconductor field effect transistor and a manufacturing method thereof. Background technique [0002] With the characteristics of high critical breakdown electric field, high thermal conductivity, high hot carrier saturation drift speed, and strong radiation resistance, silicon carbide (Silicon Carbide) material greatly expands the energy handling capacity of power devices and meets the requirements of the following A generation of power electronic equipment requires higher power, smaller size and harsher working conditions for power devices, which are gradually being applied to various electronic system fields. [0003] Silicon carbide VDMOS is often used in high-power devices. It works under high-voltage and high-current conditions, and it will generate a lot of heat when it is turned on and off repeatedly. If it is not regulated i...

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Problems solved by technology

[0004] In the process of realizing the present invention, the inventor found that there are at least the following technical problems in the prior art: using peripheral circuits to detect the operating temperature of silicon carbide VDMOS devices increases the overhead of the circuit, and at the same time does not have timeliness; using sensors to detect silicon carbide VDMOS The operating temperature of the device is for the detection of the temperature after packaging, which cannot well reflect the temperature of the silicon carbide VDMOS device in the package.

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